參數(shù)資料
型號: KSH13003
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 功率晶體管
英文描述: High Voltage Power Transistor D-PACK for Surface Mount Applications
中文描述: 1.5 A, 400 V, NPN, Si, POWER TRANSISTOR
封裝: DPAK-3
文件頁數(shù): 1/4頁
文件大?。?/td> 57K
代理商: KSH13003
2000 Fairchild Semiconductor International
Rev. A, February 2000
K
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°
C
unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current (DC)
I
CP
Collector Current (Pulse)
I
B
Base Current
P
C
Collector Dissipation (T
C
=25
°
C)
T
J
Junction Temperature
T
STG
Storage Temperature
Electrical Characteristics
T
C
=25
°
C
unless otherwise noted
Symbol
Parameter
V
CEO
(sus)
* Collector-Emitter Breakdown Voltage
I
EBO
Emitter Cut-off Current
h
FE
* DC Current Gain
* Pulse Test: Pulse Width=5ms, Duty Cycle
10%
Parameter
Value
700
400
9
1.5
3
0.75
40
150
- 65 ~ 150
Units
V
V
V
A
A
A
W
°
C
°
C
Test Condition
I
C
= 5mA, I
B
= 0
V
EB
= 9V, I
C
= 0
V
CE
= 2V, I
C
= 0.5A
V
CE
= 2V, I
C
= 1A
I
C
= 0.5A, I
B
= 0.1A
I
C
= 1A, I
B
= 0.25A
I
C
= 1.5A, I
B
= 0.5A
I
C
= 0.5A, I
B
= 0.1A
I
C
= 1A, I
B
= 0.25A
V
CB
= 10V, f
= 0.1MHz
V
CE
= 10V, I
C
= 0.1A
V
CC
= 125V, I
C
= 1A
I
B
1 = 0.2A, I
B
2 = - 0.2A
Min.
400
Typ.
Max.
Units
V
μ
A
10
40
8
5
V
CE
(sat)
* Collector-Emitter Saturation Voltage
0.5
1
3
1
1.2
V
V
V
V
V
pF
MHz
μ
s
μ
s
μ
s
V
BE
(sat)
* Base-Emitter Saturation Voltage
C
ob
f
T
t
ON
t
STG
t
F
Output Capacitance
Current Gain Bandwidth Product
Turn ON time
Storage time
Fall Time
21
4
1.1
4.0
0.7
KSH13003
High Voltage Power Transistor
D-PACK for Surface Mount Applications
High speed Switching
Suitable for Switching Regulator Motor Control
Straight Lead (I.PACK, I Suffix)
Lead Formed for Surface Mount Applications (No Suffix)
1.Base 2.Collector 3.Emitter
D-PAK
I-PAK
1
1
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