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參數(shù)資料
| 型號(hào)： | KSH47 |
| 廠(chǎng)商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | High Voltage and High Reliability D-PAK for Surface Mount Applications |
| 中文描述： | 1 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-252 |
| 封裝： | DPAK-3 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 50K |
| 代理商： | KSH47 |
2002 Fairchild Semiconductor Corporation
Rev. A4, October 2002
K
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°
C
unless otherwise noted
Symbol
V
CBO
Collector-Emitter Voltage
Electrical Characteristics
T
C
=25
°
C
unless otherwise noted
Symbol
Parameter
V
CEO
(sus)
* Collector-Emitter Sustaining Voltage
* Pulse Test: PW
≤
300
μ
s, Duty Cycle
≤
2%
Parameter
Value
Units
: KSH47
: KSH50
350
500
V
V
V
CEO
Collector-Emitter Voltage
: KSH47
: KSH50
250
400
5
1
2
0.6
15
1.56
150
V
V
V
A
A
A
W
W
°
C
°
C
V
EBO
I
C
I
CP
I
B
P
C
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25
°
C)
Collector Dissipation (T
a
=25
°
C)
Junction Temperature
Storage Temperature
T
J
T
STG
- 65 ~ 150
Test Condition
Min.
Max.
Units
: KSH47
: KSH50
I
C
= 30mA, I
B
= 0
250
400
V
V
I
CEO
Collector Cut-off Current
: KSH47
: KSH50
V
CE
= 150V, I
B
= 0
V
CE
= 300V, I
B
= 0
V
CE
= 350, V
EB
= 0
V
CE
= 500, V
EB
= 0
V
BE
= 5V, I
C
= 0
V
CE
= 10V, I
C
= 0.3A
V
CE
= 10V, I
C
= 1A
I
C
= 1A, I
B
= 0.2A
V
CE
= 10A, I
C
= 1A
V
CE
=10V, I
C
= 0.2A
0.2
0.2
mA
mA
I
CES
Collector Cut-off Current
: KSH47
: KSH50
0.1
0.1
1
150
mA
mA
mA
I
EBO
h
FE
Emitter Cut-off Current
* DC Current Gain
30
10
V
CE
(sat)
V
BE
(sat)
f
T
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
1
1.5
V
V
10
MHz
KSH47/50
High Voltage and High Reliability
D-PAK for Surface Mount Applications
Lead Formed for Surface Mount Application (No Suffix)
Straight Lead (I-PAK, “- I” Suffix)
Electrically Similar to Popular TIP47 and TIP50
1.Base 2.Collector 3.Emitter
D-PAK
I-PAK
1
1
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