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參數(shù)資料
| 型號： | KSH127 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | D-PAK for Surface Mount Applications |
| 中文描述： | 8 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-252 |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 57K |
| 代理商： | KSH127 |
2002 Fairchild Semiconductor Corporation
Rev. A4, October 2002
K
PNP Silicon Darlington Transistor
Absolute Maximum Ratings
T
C
=25
°
C unless otherwise noted
Symbol
Parameter
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current (DC)
I
CP
Collector Current (Pulse)
I
B
Base Current
P
C
Collector Dissipation (T
C
=25
°
C)
Collector Dissipation (T
a
=25
°
C)
T
J
Junction Temperature
T
STG
Storage Temperature
Electrical Characteristics
T
C
=25
°
C
unless otherwise noted
Symbol
Parameter
V
CEO
(sus)
*Collector-Emitter Sustaining Voltage
I
CEO
Collector Cut-off Current
I
CBO
Collector Cut-off Current
I
EBO
Emitter Cut-off Current
h
FE
*DC Current Gain
* Pulse Test: PW
≤
300
μ
s, Duty Cycle
≤
2%
Value
- 100
- 100
- 5
- 8
- 16
- 120
20
1.75
150
- 65 ~ 150
Units
V
V
V
A
A
mA
W
W
°
C
°
C
Test Condition
I
C
= - 30mA, I
B
= 0
V
CE
= - 50V, I
B
= 0
V
CB
= - 100V, I
E
= 0
V
EB
= - 5V, I
C
= 0
V
CE
= - 4V, I
C
= - 4A
V
CE
= - 4V, V
EB
= -8A
I
C
= - 4A, I
B
= - 16mA
I
C
= - 8A, I
B
= - 80mA
I
C
= - 8A, I
B
= - 80mA
V
CE
= -4V, I
C
= - 4A
V
CB
= - 10V, I
E
= 0
f= 0.1MHz
Min.
- 100
Max.
Units
V
μ
A
μ
A
mA
- 10
- 10
- 2
12K
1000
100
V
CE
(sat)
*Collector-Emitter Saturation Voltage
- 2
- 4
- 4.5
- 2.8
300
V
V
V
V
pF
V
BE
(sat)
V
BE
(on)
C
ob
*Base-Emitter Saturation Voltage
*Base-Emitter On Voltage
Output Capacitance
KSH127
D-PAK for Surface Mount Applications
High DC Current Gain
Built-in a Damper Diode at E-C
Lead Formed for Surface Mount Applications (No Suffix)
Straight Lead (I-PAK, “ - I “ Suffix)
Electrically Similar to Popular TIP127
Complement to KSH122
Equivalent Circuit
B
E
C
R1
R2
R1
R2
8k
0.12k
1.Base 2.Collector 3.Emitter
D-PAK
I-PAK
1
1
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KSH127ITU | 功能描述:兩極晶體管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| KSH127TF | 功能描述:達(dá)林頓晶體管 PNP Silicon Darl RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| KSH127TM | 功能描述:達(dá)林頓晶體管 PNP Silicon Darl RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| KSH13003 | 制造商:HUASHAN 制造商全稱:HUASHAN 功能描述:NPN SILICON TRANSISTOR |
| KSH13003A | 制造商:SEMIHOW 制造商全稱:SEMIHOW 功能描述:High Voltage Switch Mode Applications |
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