參數(shù)資料
型號: KSH210
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 功率晶體管
英文描述: D-PAK for Surface Mount Applications
中文描述: 5 A, 25 V, PNP, Si, POWER TRANSISTOR, TO-252
封裝: DPAK-3
文件頁數(shù): 1/6頁
文件大小: 52K
代理商: KSH210
2002 Fairchild Semiconductor Corporation
Rev. A4, October 2002
K
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°
C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current (DC)
I
CP
Collector Peck Current (Pulse)
I
B
Base Current
P
C
Collector Dissipation (T
C
= 25
°
C)
Collector Dissipation (T
a
= 25
°
C)
T
J
Junction Temperature
T
STG
Storage Temperature
Electrical Characteristics
T
C
=25
°
C
unless otherwise noted
Symbol
Parameter
V
CEO
(sus)
* Collector-Emitter Sustaining Voltage
I
CBO
Collector Cut-off Current
I
EBO
Emitter Cut-off Current
h
FE
* DC Current Gain
* Pulse Test: PW
300
μ
s, Duty Cycle
2%
Parameter
Value
- 40
- 25
- 8
- 5
- 10
- 1
12.5
1.4
150
- 65 ~ 150
Units
V
V
V
A
A
A
W
W
°
C
°
C
Test Condition
Min.
-25
Max.
Units
V
nA
nA
I
C
= - 10mA, I
B
= 0
V
CB
= - 40V, I
E
= 0
V
EBO
= - 8V, I
C
= 0
V
CE
= - 1V, I
C
= - 500mA
V
CE
= - 1V, I
C
= - 2A
V
CE
= - 2V, I
C
= - 5A
I
C
= - 500mA, I
B
= - 50mA
I
C
= - 2A, I
B
= - 200mA
I
C
= - 5A, I
B
= - 1A
I
C
= - 5A, I
B
= - 1A
V
CE
= - 1V, I
C
= - 2A
V
CE
= - 10V, I
C
= - 100mA
V
CB
= - 10V, I
E
= 0, f = 0.1MHz
-100
-100
70
45
10
180
V
CE
(sat)
* Collector-Emitter Saturation Voltage
-0.3
-0.75
-1.8
-2.5
-1.6
V
V
V
V
V
V
BE
(sat)
V
BE
(on)
f
T
C
ob
* Base-Emitter Saturation Voltage
* Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
65
MHz
pF
120
KSH210
D-PAK for Surface Mount Applications
High DC Current Gain
Low Collector Emitter Saturation Voltage
Lead Formed for Surface Mount Applications (No Suffix)
Straight Lead (I-PAK, “ - I “ Suffix)
1.Base 2.Collector 3.Emitter
D-PAK
I-PAK
1
1
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