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參數(shù)資料
| 型號： | KSA1156 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | High Voltage Switching Low Power Switching Regulator DC-DC Converter |
| 中文描述： | 500 mA, 400 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-126 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 65K |
| 代理商： | KSA1156 |
2000 Fairchild Semiconductor International
Rev. A, February 2000
K
PNP Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°
C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
B
Base Current
I
C
Collector Current (DC)
I
CP
Collector Current (Pulse)
P
C
Collector Dissipation (T
a
=25
°
C)
P
C
Collector Dissipation (T
C
=25
°
C)
T
J
Junction Temperature
T
STG
Storage Temperature
Electrical Characteristics
T
C
=25
°
C unless otherwise noted
Symbol
Parameter
V
CEO
(sus)
Collector-Emitter Sustaining Voltage
h
FE
Classification
Classification
h
FE
Parameter
Ratings
- 400
- 400
- 7
- 0.25
- 0.5
- 1
1
10
150
- 55 ~ 150
Units
V
V
V
A
A
A
W
W
°
C
°
C
Test Condition
Min.
- 400
Max.
Units
V
I
C
= - 100mA, I
B
= - 10mA
L = - 20mH
I
C
= - 200mA, I
B1
= - I
B2
= - 20mA
V
BE
(off)= 5V, L = 10mH
V
CB
= - 400V, I
E
= 0
V
EB
= - 5V, I
C
= 0
V
CE
= - 400V, V
BE
(off) = 1.5V
V
CE
= - 400V, V
BE
(off) = 1.5V
T
C
= 125
°
C
V
CE
= - 5V, I
C
= - 100mA
I
C
= - 100mA, I
B
= - 10mA
I
C
= - 100mA, I
B
= - 10mA
V
CC
= - 150V, I
C
= - 100mA
I
B1
= - 10mA , I
B2
= 20mA
R
L
= 1.5K
V
CEX
(sus)
Collector-Emitter Sustaining Voltage
Collector Cut-off Current
Emitter Cut-off Current
Collector Cut-off Current
Collector Cut-off Current
- 400
V
I
CBO
I
EBO
I
CEX1
I
CEX2
- 100
- 10
- 100
- 1
μ
A
μ
A
μ
A
mA
h
FE
V
CE
(sat)
V
BE
(sat)
t
ON
t
STG
t
F
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Turn On Time
Storage Time
Fall Time
30
200
- 1
- 1.2
1
4
1
V
V
μ
s
μ
s
μ
s
N
R
O
Y
30 ~ 60
40 ~ 80
60 ~ 120
100 ~ 200
KSA1156
High Voltage Switching
Low Power Switching Regulator
DC-DC Converter
High Breakdown Voltage
Low Collector Saturation Voltage
High Speed Switching
1
1. Emitter 2.Collector 3.Base
TO-126
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| KSA1156OSTU | 功能描述:兩極晶體管 - BJT PNP Silicon RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| KSA1156YS | 功能描述:兩極晶體管 - BJT PNP Silicon RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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