參數(shù)資料
型號: KS57C01502
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: The KS57C01502/C01504 single-chip CMOS microcontroller has been designed for high-performance using Samsungs newest 4-bit CPU core, SAM47 (Samsung Arr
中文描述: 在KS57C01502/C01504單芯片CMOS微控制器是專門為高性能三星則采用最新的4位CPU核心,SAM47(三星到達(dá)
文件頁數(shù): 18/36頁
文件大?。?/td> 308K
代理商: KS57C01502
KS57C01502/C01504/P01504
ELECTRICAL DATA
14-5
Table 14-4. Input/Output Capacitance
(T
A
= 25
°
C, V
DD
= 0 V )
Parameter
Input
Capacitance
Symbol
C
IN
Condition
Min
Typ
Max
15
Units
pF
f = 1 MHz; Unmeasured pins
are returned to V
SS
Output
Capacitance
I/O Capacitance
C
OUT
15
pF
C
IO
15
pF
Table 14-5. Comparator Electrical Characteristics
(T
A
= – 40
°
C to + 85
°
C, V
DD
= 4.0 V to 5.5V, V
SS
= 0 V)
Parameter
Input Voltage Range
Symbol
V
REF
Condition
Min
0
Typ
Max
V
DD
V
DD
Units
V
Reference Voltage
Range
Input Voltage Accuracy
0
V
V
CIN
I
CIN,
I
REF
±
150
3
mV
Input Leakage Current
– 3
μ
A
Table 14-6. A.C. Electrical Characteristics
(T
A
= – 40
°
C to + 85
°
C, V
DD
= 1.8 V to 5.5 V)
Parameter
Symbol
Instruction Cycle
Time
Conditions
Min
0.67
Typ
Max
64
Units
μ
s
t
CY
V
DD
= 2.7 V to 5.5 V
V
DD
= 1.8 V to 5.5 V
V
DD
= 2.7 V to 5.5 V
0.95
TCL0 Input
Frequency
f
TI
0
1.5
MHz
V
DD
= 1.8 V to 5.5 V
V
DD
= 2.7 V to 5.5 V
1
MHz
TCL0 Input High,
Low Width
t
TIH
,
t
TIL
0.48
μ
s
V
DD
= 1.8 V to 5.5 V
V
DD
= 2.7 V to 5.5 V
External
1.8
Cycle Time
t
KCY
source
800
ns
Internal
V
DD
= 1.8 V to 5.5 V
External
source
670
3200
source
Internal
source
3800
Table 14-6. A.C. Electrical Characteristics ( Concluded)
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