參數資料
型號: KS0164
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: Multimedia Audio(波表合成芯片)
中文描述: 多媒體音響(波表合成芯片)
文件頁數: 10/18頁
文件大小: 83K
代理商: KS0164
KS0164 MULTIMEDIA AUDIO
10/
19
GENERAL DESCRIPTION (continued)
The specification for the synthesizer are as follows:
Architecture:
Voices:
Polyphony:
Multi-Timbral Capability:
Sample Memory:
Available Sample Sets:
D/A Converter:
Sample Playback Rate:
Level And Panning Controls:
Filters:
Data Formats:
Envelopes:
Effects:
Firmware:
Compatibility:
Digital Wavetable Synthesizer
32
32 Notes Maximum
Up To 16 Parts
Up To 16 MWords of ROM/SRAM/DRAM
2Mx16-bits, 1Mx16-bits, 512Kx16-bits
16-Bit Linear Serial Converter, All Common Data Formats Supported
Fixed @ 44.1 kHz
Separate 16-Bit L&R Volume Controls For Each Voice
2 Separate 2-Pole Resonant Digital Filters For Each Voice
8- Or 16-Bit Signed Linear Or 8- Or 12-Bit Compressed
Hardware Envelopes For Amplitude and Filters
Effects Loop Provided For DSP Multiple Effects Processor
Sequoia Development Group Pegasus Synthesizer Firmware
Fully General-MIDI Compliant
Roland MT-32 Sound Set Compatible
S
YSTEM
T
IMING
A
ND
C
ONTROL
All timing is derived from a 16.9344 MHz crystal
oscillator, or an externally generated oscillator of
any frequency up to 33 MHz. However, note that
the internal MIDI UART baud rate is directly
proportional to the system clock rate. At any crystal
frequency other than 16.9344 MHz, the UART baud
rate will not be correct.
S
AMPLE
M
EMORY
I
NTERFACE
Each memory access cycle consists of 3 cycles of
the 16.9344 MHz master clock, or 177.15 nsec.
This is adequate to allow use of 150 nsec ROM,
and 80 nsec DRAM. The memory interface
supports a minimum of one and a maximum of
three memory devices. In general the CPU will
execute entirely out of ROM, and most, if not all,
synthesizer voices will also be playing primarily
from ROM, although entirely RAM-based systems
are also fully supported. ROM memory accesses
are exploited to allow DRAM refresh to occur
simultaneously with ROM accesses by executing
CAS-before-RAS refresh cycles on all DRAM banks
in parallel with all ROM/SRAM accesses. For
systems with ROM-based samples, this scheme
provides adequate refresh for all DRAM in the
system. For a totally DRAM-based system, it is
necessary to allocate one synthesizer voice to
perform DRAM refresh. For a combined
ROM/DRAM system, as long as at least two voices
are playing samples from ROM at all times,
adequate refresh will be provided automatically,
otherwise one voice must be dedicated to providing
DRAM refresh.
相關PDF資料
PDF描述
KS0165 Multimedia Audio(波表合成芯片)
KS0678 6 BIT 420 CHANNEL TFT-LCD SOURCE DRIVER
KS0708 64COM/128SEG DRIVE FOR DOT MATRIX LCD
KS0718 CAP, TANT, 10UF, 10V, 3216, 20%, SM
KS0724 65 COM / 132 SEG DRIVER & CONTROLLER FOR STN LCD
相關代理商/技術參數
參數描述
KS-01Q-01 功能描述:SWITCH PUSH SPST-NO 0.01A 35V RoHS:是 類別:開關 >> 按鈕 系列:KS, LAMB 標準包裝:1 系列:A16 類型:標準,發(fā)光式 電路:雙刀雙擲 開關功能:開-瞬時 額定電流:5A(AC) 額定電壓 - AC:125V 額定電壓 - DC:- 觸動器類型:方形,按鈕 顏色 - 致動器/蓋:黃 發(fā)光類型,顏色:LED,黃 發(fā)光電壓:12 VDC 安裝類型:前面板安裝 端接類型:焊接,快速連接 - 0.110"(2.8mm) 防護等級:IP65 - 防塵/防油/防水 特點:- 面板切口尺寸:圓形 - 直徑 16.00mm 包裝:散裝 工作溫度:-10°C ~ 55°C 機械壽命:2,000,000 次循環(huán) 電氣壽命:100,000 次循環(huán) 其它名稱:A165LAYM12D2
KS-01Q-02 功能描述:SWITCH PUSH SPST-NO 0.01A 35V RoHS:是 類別:開關 >> 按鈕 系列:KS, LAMB 標準包裝:1 系列:A16 類型:標準,發(fā)光式 電路:雙刀雙擲 開關功能:開-瞬時 額定電流:5A(AC) 額定電壓 - AC:125V 額定電壓 - DC:- 觸動器類型:方形,按鈕 顏色 - 致動器/蓋:黃 發(fā)光類型,顏色:LED,黃 發(fā)光電壓:12 VDC 安裝類型:前面板安裝 端接類型:焊接,快速連接 - 0.110"(2.8mm) 防護等級:IP65 - 防塵/防油/防水 特點:- 面板切口尺寸:圓形 - 直徑 16.00mm 包裝:散裝 工作溫度:-10°C ~ 55°C 機械壽命:2,000,000 次循環(huán) 電氣壽命:100,000 次循環(huán) 其它名稱:A165LAYM12D2
KS-01Q-03 功能描述:SWITCH PUSH SPST-NO 0.01A 35V RoHS:是 類別:開關 >> 按鈕 系列:KS, LAMB 標準包裝:1 系列:A16 類型:標準,發(fā)光式 電路:雙刀雙擲 開關功能:開-瞬時 額定電流:5A(AC) 額定電壓 - AC:125V 額定電壓 - DC:- 觸動器類型:方形,按鈕 顏色 - 致動器/蓋:黃 發(fā)光類型,顏色:LED,黃 發(fā)光電壓:12 VDC 安裝類型:前面板安裝 端接類型:焊接,快速連接 - 0.110"(2.8mm) 防護等級:IP65 - 防塵/防油/防水 特點:- 面板切口尺寸:圓形 - 直徑 16.00mm 包裝:散裝 工作溫度:-10°C ~ 55°C 機械壽命:2,000,000 次循環(huán) 電氣壽命:100,000 次循環(huán) 其它名稱:A165LAYM12D2
KS-03 制造商:KSS 功能描述: 制造商:Block Master 功能描述:
KS031 制造商:POWEREX 制造商全稱:Powerex Power Semiconductors 功能描述:Base Drive Transistor Module (5 Amperes/1000 Volts)