參數(shù)資料
型號: KMM374F213BK
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 2M x 72 DRAM DIMM(2Mx72 動態(tài) RAM模塊)
中文描述: 200萬× 72的DRAM內(nèi)存(2Mx72動態(tài)內(nèi)存模塊)
文件頁數(shù): 5/20頁
文件大?。?/td> 385K
代理商: KMM374F213BK
DRAM MODULE
KMM374F213BK
KMM374F203BK
AC CHARACTERISTICS
(0
°
C
T
A
70
°
C, V
CC
=3.3V
±
0.3V. See notes 1,2.)
Test condition : V
ih
/V
il
=2.0/0.8V, V
oh
/V
ol
=2.0/0.8V, Output loading C
L
=100pF
Parameter
Symbol
-5
-6
Unit
Note
Min
73
48
53
5
10
5
Max
Min
85
55
60
5
10
5
Max
RAS to W dealy time
Column address to W delay time
CAS precharge to W delay time
CAS setup time (CAS-before-RAS refresh)
CAS hold time (CAS-before-RAS refresh)
RAS to CAS precharge time
Access time from CAS precharge
Hyper page mode cycle time
Hyper page mode read-modify write cycle
CAS precharge time (Hyper page cycle
RAS pulse width (Hyper page cycle)
RAS hold time from CAS precharge
OE access time
OE to data delay
Output buffer turn off delay time from OE
OE command hold time
W to RAS precharge time (C-B-R refresh)
W to RAS hold time (C-B-R refresh)
Output data hold time
Output buffer turn off delay from RAS
Output buffer turn off delay from W
W to data delay
OE to CAS hold time
CAS hold time to OE
OE precharge time
W pulse width
t
RWD
t
AWD
t
CPWD
t
CSR
t
CHR
t
RPC
t
CPA
t
HPC
t
HPRWC
t
CP
t
RASP
t
RHCP
t
OEA
t
OED
t
OEZ
t
OEH
t
WRP
t
WRH
t
DOH
t
REZ
t
WEZ
t
WED
t
OCH
t
CHO
t
OEP
t
WPE
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
7
7
28
35
3
25
68
8
50
30
30
77
10
60
35
13
13
200K
200K
13
15
13
3
13
15
3
15
13
15
7,11
10
10
10
10
5
3
3
5
3
3
13
13
15
15
6,11,12
6,11
15
5
5
5
5
15
5
5
5
5
相關(guān)PDF資料
PDF描述
KMM374F203BK 2M x 72 DRAM DIMM(2Mx72 動態(tài) RAM模塊)
KMM374F213CK 2M x 72 DRAM DIMM(2Mx72 動態(tài) RAM模塊)
KMM374F203CK 2M x 72 DRAM DIMM(2Mx72 動態(tài) RAM模塊)
KMM374F803BK1 8M x 72 DRAM DIMM(8Mx72 動態(tài) RAM模塊)
KMM375S1620BT 16Mx72 SDRAM DIMM(16M x 72 動態(tài) RAM模塊)
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