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參數(shù)資料
| 型號(hào)： | KMM372V410CK |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 3.3V |
| 中文描述： | 4米× 72的DRAM內(nèi)存的ECC的使用4Mx4，4K的2K刷新，3.3 |
| 文件頁數(shù)： | 6/19頁 |
| 文件大?。?/td> | 411K |
| 代理商： | KMM372V410CK |
DRAM MODULE
KMM372V410CK/CS
KMM372V400CK/CS
NOTES
An initial pause of 200us is required after power-up followed
by any 8 RAS-only or CAS-before-RAS refresh cycles before
proper device operation is achieved.
Input voltage levels are Vih/Vil. V
IH
(min) and V
IL
(max) are ref-
erence levels for measuring timing of input signals. Transition
times are measured between V
IH
(min) and V
IL
(max) and are
assumed to be 5ns for all inputs.
Measured with a load equivalent to 1TTL loads and 100pF.
Voh=2.0V and Vol=0.8V.
Operation within the
t
RCD
(max) limit insures that
t
RAC
(max)
can be met.
t
RCD
(max) is specified as a reference point only.
If
t
RCD
is greater than the specified
t
RCD
(max) limit, then
access time is controlled exclusively by
t
CAC
.
Assumes that
t
RCD
≥
t
RCD
(max).
This parameter defines the time at which the output achieves
the open circuit condition and is not referenced to V
OH
or V
OL.
t
WCS
is not restrictive operating parameter. It included in the
data sheet as electrical characteristic only. If
t
WCS
≥
t
WCS
(min)
the cycle is an early write cycle and the data out pin will
remain high impedance for the duration of the cycle.
Either
t
RCH
or
t
RRH
must be satisfied for a read cycle.
These parameters are referenced to the CAS leading edge in
early write cycles.
Operation within the
t
RAD
(max) limit insures that
t
RAC
(max)
can be met.
t
RAD
(max) is specified as reference point only. If
t
RAD
is greater than the specified
t
RAD
(max) limit, then access
time is controlled by
t
AA
.
The timing skew from the DRAM to the DIMM resulted from
the addition of buffers.
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KMM372V410CS | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 3.3V |
| KMM372V413CK | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 72 DRAM DIMM with ECC using 2Mx8, Dual Bank 2K Refresh, 3.3V |
| KMM372V413CS | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 72 DRAM DIMM with ECC using 2Mx8, Dual Bank 2K Refresh, 3.3V |
| KMM372V803BK | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 72 DRAM DIMM with ECC using 8Mx8, 4K 8K Refresh, 3.3V |
| KMM372V803BS | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 72 DRAM DIMM with ECC using 8Mx8, 4K 8K Refresh, 3.3V |
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