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參數(shù)資料
| 型號： | KM718V990 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512Kx18 Synchronous SRAM(512Kx18位同步靜態(tài) RAM) |
| 中文描述： | 512Kx18同步SRAM（512Kx18位同步靜態(tài)內(nèi)存） |
| 文件頁數(shù)： | 1/17頁 |
| 文件大?。?/td> | 365K |
| 代理商： | KM718V990 |
PRELIMINARY
KM718V990
256Kx36 & 512Kx18 Synchronous SRAM
- 1 -
Rev 0.4
Sep. 1998
KM736V890
Document Title
256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
Revision History
Rev. No.
0.0
0.1
0.2
0.3
0.4
Remark
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
History
Initial draft
Modify DC characteristics( Input Leakage Current test Conditions)
form V
DD
=V
SS
to V
DD
to Max.
Remove 119BGA Package Type.
Change DC Characteristics.
I
SB
value from 65mA to 110mA at -72
I
SB
value from 60mA to 110mA at -85
I
SB
value from 50mA to 100mA at -10
I
SB1
value from 10mA to 30mA
I
SB2
value from 10mA to 30mA
1. Changed tCD from 4.0ns to 4.2ns at -85.
Changed tOE from 4.0ns to 4.2ns at -85.
2. Changed DC condition at Icc and parameters
Icc ; from 375mA to 400mA at -72,
from 340mA to 380mA at -85,
from 300mA to 350mA at -10,
I
SB
; from 110mA to 130mA at -72,
from 110mA to 130mA at -85,
from 100mA to 120mA at -10
Draft Date
May. 07 . 1998
June .08. 1998
Aug. 20. 1998
Aug. 27. 1998
Sep. 09. 1998
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