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參數(shù)資料
| 型號(hào)： | KM718V887 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Kx18 Synchronous SRAM |
| 中文描述： | 256Kx18同步SRAM |
| 文件頁數(shù)： | 1/20頁 |
| 文件大?。?/td> | 536K |
| 代理商： | KM718V887 |
512Kx36 & 1Mx18 Synchronous SRAM
- 1 -
Rev 1.0
December 1999
KM718V089
KM736V989
Document Title
512Kx36 & 1Mx18-Bit Synchronous Pipelined Burst SRAM
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
Revision History
Rev. No.
0.0
0.1
0.2
0.3
1.0
Remark
Preliminary
Preliminary
Preliminary
Preliminary
Final
History
Initial draft
1. Update ICC & ISB values.
1. Change I
SB
value from 150mA to 110mA at -67.
2. Change I
SB
value from 130mA to 90mA at -72 .
3. Change I
SB
value from 120mA to 80mA at -10 .
1. Add tCYC 167MHz and 183MHz.
2. Changed DC condition at Icc and parameters
Icc ; from 420mA to 400mA at -67,
from 400mA to 380mA at -72,
from 350mA to 320mA at -10,
1. Final Spec Release.
Draft Date
Dec. 29. 1998
May. 27. 1999
Sep. 04. 1999
Nov. 19. 1999
Dec. 08. 1999
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| KM718V887T-9 | 制造商:Samsung SDI 功能描述:MEMORY-SRAM |
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