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參數(shù)資料
| 型號(hào)： | KM736S849 |
| 廠(chǎng)商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Kx36 Synchronous SRAM(256Kx36位同步靜態(tài) RAM) |
| 中文描述： | 256Kx36同步SRAM（256Kx36位同步靜態(tài)內(nèi)存） |
| 文件頁(yè)數(shù)： | 1/17頁(yè) |
| 文件大?。?/td> | 279K |
| 代理商： | KM736S849 |
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PRELIMINARY
KM736S849
KM718S949
256Kx36 & 512Kx18 Pipelined N
t
RAM
TM
- 1 -
Rev 0.5
Aug. 1998
Document Title
256Kx36 & 512Kx18-Bit Pipelined N
t
RAM
TM
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
Revision History
Rev. No.
0.0
0.1
0.2
0.3
0.4
0.5
Remark
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
History
1. Initial document.
1. Changed speed bin from 167MHz to 150MHz
2. Changed DC Parameters;
I
CC
: from 400mA to 450mA
I
SB
: from 60mA to 20mA
I
SB2
: from 50mA to 85mA
1. Changed speed bin from 150MHz to 167MHz
2. Changed Power from 3.3V to 2.5V
3. Changed N.C pins to Power and ZZ Pin
#14, #16, #64, #66
4. Changed some control pin names.
from CEN to CKE, from BWEx to BWx
5. Modify absolute maximum ratings
V
DD
; from 4.0V to 3.6V, V
IN
; from 4.6V to 3.6V
6. Changed DC parameters
I
SB
; from 20mA to 80mA, I
SB2
; from 85mA to 10mA
V
OL
; from 0.4V to 0.2V, V
OH
; from 2.4V to 2.0V
V
IL
; from 0.8V to 0.7V, V
IH
; from 2.0V to 1.7V
7. Add the sleep mode timing and characteristics
CKE controlled timing and CS controlled timing
1. Removed speed bin 167MHz
2.Changed AC parameters
t
HZOE
; from 4.0 to 3.5 , t
HZC
;from 4.0 to 3.5 for 133MHz
t
HZOE
; from 5.0 to 3.5 , t
HZC
;from 5.0 to 3.5 , t
CL/H
; 4.0 to 3.0
for 100MHz
3.Modify Sleep Mode Waveform.
Changed Sleep Mode Electrical Characteristics .
t
PDS
;from MAX 2cycle to MIN 2cycle
t
PUS
; from MAX 2cycle to MIN 2cycle
Modify from ADV to ADV at timing.
Add the Trade Mark( N
t
RAM
TM
)
1. Changed DC parameters
I
SB1
; from 10mA to 20mA, I
SB2
; from 10mA to 20mA
Draft Date
September. 1997
November. 1997
March. 11. 1998
April. 11. 1998
June. 02. 1998
Aug. 19. 1998
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM718S949 | 512Kx18 Synchronous SRAM(512Kx18位同步靜態(tài) RAM) |
| KM736V687-10 | x36 Fast Synchronous SRAM |
| KM736V687-8 | x36 Fast Synchronous SRAM |
| KM736V687-9 | x36 Fast Synchronous SRAM |
| KM736V687 | 64Kx36-Bit Synchronous Burst SRAM, 3.3V Power Datasheets for 100TQFP |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM736V687 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:64Kx36-Bit Synchronous Burst SRAM, 3.3V Power Datasheets for 100TQFP |
| KM736V687-10 | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:x36 Fast Synchronous SRAM |
| KM736V687-8 | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:x36 Fast Synchronous SRAM |
| KM736V687-9 | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:x36 Fast Synchronous SRAM |
| KM736V687A | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:64Kx36 Synchronous SRAM |
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