參數(shù)資料
型號(hào): KM68V257C
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 32K x 8 Bit High-Speed CMOS Static RAM (3.3V Operating)(32K x 8位高速CMOS 靜態(tài) RAM)
中文描述: 32K的× 8位高速CMOS靜態(tài)RAM(3.3V的工作)(32K的× 8位高速的CMOS靜態(tài)RAM)的
文件頁(yè)數(shù): 8/9頁(yè)
文件大小: 133K
代理商: KM68V257C
KM68V257C
CMOS SRAM
PRELIMINARY
Rev 3.0
- 8 -
February 1998
FUNCTIONAL DESCRIPTION
* NOTE : X means Don
t Care.
CS
WE
OE
Mode
I/O Pin
Supply Current
H
X
X*
Not Select
High-Z
I
SB
, I
SB1
L
H
H
Output Disable
High-Z
I
CC
L
H
L
Read
D
OUT
I
CC
L
L
X
Write
D
IN
I
CC
DATA RETENTION CHARACTERISTICS*
(T
A
=0 to 70
°
C)
Parameter
Symbol
Test Condition
Min.
Typ.
Max.
Unit
V
CC
for Data Retention
V
DR
CS
V
CC
- 0.2V
V
CC
= 3.0V, CS
V
CC
- 0.2V
2.0
-
3.6
V
Data Retention Current
I
DR
-
-
0.07
mA
Data Retention Set-Up Time
t
SDR
See Data Retention
Wave form(below)
0
-
-
ns
Recovery Time
t
RDR
5
-
-
ms
DATA RETENTION WAVE FORM
V
CC
3.0V
2.2V
V
DR
CS
GND
Data Retention Mode
CS
V
CC
- 0.2V
t
SDR
t
RDR
CS controlled
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