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參數(shù)資料
| 型號(hào)： | KM68V257C |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 32K x 8 Bit High-Speed CMOS Static RAM (3.3V Operating)(32K x 8位高速CMOS 靜態(tài) RAM) |
| 中文描述： | 32K的× 8位高速CMOS靜態(tài)RAM（3.3V的工作）（32K的× 8位高速的CMOS靜態(tài)RAM）的 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 133K |
| 代理商： | KM68V257C |
KM68V257C
CMOS SRAM
PRELIMINARY
Rev 3.0
- 2 -
February 1998
PIN FUNCTION
Pin Name
Pin Function
A
0
- A
14
Address Inputs
WE
Write Enable
CS
Chip Select
OE
Output Enable
I/O
1
~ I/O
8
Data Inputs/Outputs
V
CC
Power(+3.3V)
V
SS
Ground
32K x 8 Bit High-Speed CMOS Static RAM (3.3V Operating)
FEATURES
Fast Access Time 15, 17ns(Max.)
Low Power Dissipation
Standby (TTL) : 30mA(Max.)
(CMOS) : 0.1mA(Max.)
Operating KM68V257C - 15 : 90mA(Max.)
KM68V257C - 17 : 80mA(Max.)
Single 3.3
±
0.3V Power Supply
TTL Compatible Inputs and Outputs
Fully Static Operation
- No Clock or Refresh required
Three State Outputs
Low Data Retention Voltage : 2V (Min)
Standard Pin Configuration
KM68V257CJ : 28-SOJ-300
KM68V257CTG : 28-TSOP1-0813, 4F
The KM68V257C is a 262,144-bit high-speed Static Random
Access Memory organized as 32,768 words by 8 bits. The
KM68V257C uses 8 common input and output lines and has an
output enable pin which operates faster than address access
time at read cycle. The device is fabricated using SAMSUNG
′
s
advanced CMOS process and designed for high-speed circuit
technology. It is particularly well suited for use in high-density
high-speed system applications. The KM68V257C is packaged
in a 300mil 28-pin plastic SOJ or TSOP1 forward.
GENERAL DESCRIPTION
Clk Gen.
A
3
A
4
A
5
A
6
A
7
A
8
A
12
A
13
A
14
I/O
1
~I/O
8
CS
WE
OE
PIN CONFIGURATION
(Top View)
FUNCTIONAL BLOCK DIAGRAM
R
Data
Cont.
CLK
Gen.
Pre-Charge-Circuit
Memory Array
512 Rows
64x8 Columns
SOJ
TSOP1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
OE
A
11
A
9
A
8
A
13
WE
Vcc
A
14
A
12
A
7
A
6
A
5
A
4
A
3
A
10
CS
I/O
8
I/O
7
I/O
6
I/O
5
I/O
4
Vss
I/O
3
I/O
2
I/O
1
A
0
A
1
A
2
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
A
14
A
12
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
I/O
1
I/O
2
I/O
3
Vss
Vcc
WE
A
13
A
8
A
9
A
11
OE
A
10
CS
I/O
8
I/O
7
I/O
6
I/O
5
I/O
4
Column Select
I/O Circuit
A
0
A
1
A
2
A
9
A
10
A
11
相關(guān)PDF資料 |
PDF描述 |
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| KM68V257EI | 32K x 8 Bit High-Speed CMOS Static RAM (3.3V Operating)(32K x 8位高速CMOS 靜態(tài) RAM) |
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| KM718FV4011 | 256Kx18 Synchronous SRAM(256Kx18位同步靜態(tài) RAM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM68V257C-15 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32Kx8 Bit High Speed Static RAM(3.3V Operating), Evolutionary Pin out. |
| KM68V257C-17 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32Kx8 Bit High Speed Static RAM(3.3V Operating), Evolutionary Pin out. |
| KM68V257E | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32Kx8 Bit High-Speed CMOS Static RAM (3.3V Operating) |
| KM68V257E-12 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32Kx8 Bit High-Speed CMOS Static RAM (3.3V Operating) |
| KM68V257E-15 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32Kx8 Bit High-Speed CMOS Static RAM (3.3V Operating) |
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