- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373162 > KM68U4000A (SAMSUNG SEMICONDUCTOR CO. LTD.) 512K x8 bit Low Power and Low Voltage CMOS Static RAM(512K x8位低功耗低電壓CMOS 靜態(tài) RAM) PDF資料下載
參數(shù)資料
| 型號： | KM68U4000A |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512K x8 bit Low Power and Low Voltage CMOS Static RAM(512K x8位低功耗低電壓CMOS 靜態(tài) RAM) |
| 中文描述： | 為512k x8位低功耗和低電壓的CMOS靜態(tài)RAM（為512k x8位低功耗低電壓的CMOS靜態(tài)RAM）的 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 140K |
| 代理商： | KM68U4000A |
KM68V4000A, KM68U4000A Family
CMOS SRAM
Revision 2.0
February 1998
2
512K x8 bit Low Power and Low Voltage CMOS Static RAM
FEATURES
Process Technology :TFT
Organization : 512Kx8
Power Supply Voltage
KM68V4000A Family : 3.0~3.6V
KM68U4000A Family : 2.7~3.3V
Low Data Retention Voltage : 2V(Min)
Three state output and TTL Compatible
Package Type : 32-SOP-525, 32-TSOP2-400F/R
GENERAL DESCRIPTION
The KM68V4000A and KM68U4000A families are fabricated
by SAMSUNG
′
s advanced CMOS process technology. The
families supports various operating temperature ranges and
have various package types for user flexibility of system design.
The families also support low data retention voltage for battery
back-up operation with low data retention current.
PIN DESCRIPTION
Name
CS
Function
Chip Select Input
Name
A
0
~A
18
Function
Address Inputs
OE
Output Enable Input I/O
1
~I/O
8
Data Inputs/Outputs
WE
Write Enable Input
Vcc
Power
Vss
Ground
PRODUCT FAMILY
1. The parameter is measured with 30pF test load.
Product Family
Operating Temperature
Vcc Range
Speed(ns)
Power Dissipation
PKG Type
Standby
(I
SB1
, Max)
Operating
(Icc
2
, Max)
KM68V4000AL
KM68V4000AL-L
KM68V4000ALI
LM68V4000ALI-L
KM68U4000AL
KM68U4000ALI-L
KM68U4000ALI
KM68U4000ALI-L
Commercial(0~70
°
C)
3.0~3.6V
85
1)
50/15
μ
A
50mA
32-SOP
32-TSOP2-F/R
Industrial(-40~85
°
C)
3.0~3.6V
85
1)
50/20
μ
A
Commercial(0~70
°
C)
2.7~3.3V
85
1)
/100
30/10
μ
A
Industrial(-40~85
°
C)
2.7~3.3V
85
1)
/100
30/15
μ
A
FUNCTIONAL BLOCK DIAGRAM
32-SOP
32-TSOP2-F
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
VSS
VCC
A15
WE
A13
A8
A9
A11
OE
A10
CS
I/O8
I/O7
I/O6
I/O5
I/O4
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32-TSOP2-R
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
VSS
VCC
A15
WE
A13
A8
A9
A11
OE
A10
CS
I/O8
I/O7
I/O6
I/O5
I/O4
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
A18
A17
A17
A18
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice.
A12
Precharge circuit.
Memory array
1024 rows
256K
×
8 columns
I/O Circuit
Column select
Clk gen.
Row
select
A0
A1 A2 A4 A5
A7
A6
A3
A8
A9
A10
A11
A13
A15
CS
WE
I/O
1
Data
cont
Data
cont
OE
I/O
8
A14
A17
A16
Contri
logic
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM68V4000A | 512K x8 bit Low Power and Low Voltage CMOS Static RAM(512K x8位低功耗低電壓CMOS 靜態(tài) RAM) |
| KM68U4000B | 512K x8 bit Low Power and Low Voltage CMOS Static RAM(512K x8位低功耗低電壓CMOS 靜態(tài) RAM) |
| KM68V4000B | 512K x8 bit Low Power and Low Voltage CMOS Static RAM(512K x8位低功耗低電壓CMOS 靜態(tài) RAM) |
| KM68U4000C | 512K x8 bit Low Power and Low Voltage CMOS Static RAM(512K x8位低功耗低電壓CMOS 靜態(tài) RAM) |
| KM68V4000C | 512K x8 bit Low Power and Low Voltage CMOS Static RAM(512K x8位低功耗低電壓CMOS 靜態(tài) RAM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM68V1000B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K X 8bit Low Power and Low Voltage CMOS Statinc RAM |
| KM68V1000BL | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K X 8bit Low Power and Low Voltage CMOS Statinc RAM |
| KM68V1000BL/L-L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K X 8bit Low Power and Low Voltage CMOS Statinc RAM |
| KM68V1000BLE | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K X 8bit Low Power and Low Voltage CMOS Statinc RAM |
| KM68V1000BLE/LE-L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K X 8bit Low Power and Low Voltage CMOS Statinc RAM |
發(fā)布緊急采購，3分鐘左右您將得到回復。