參數(shù)資料
型號: KM68V4000B
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 512K x8 bit Low Power and Low Voltage CMOS Static RAM(512K x8位低功耗低電壓CMOS 靜態(tài) RAM)
中文描述: 為512k x8位低功耗和低電壓的CMOS靜態(tài)RAM(為512k x8位低功耗低電壓的CMOS靜態(tài)RAM)的
文件頁數(shù): 1/9頁
文件大?。?/td> 132K
代理商: KM68V4000B
KM68V4000B, KM68U4000B Family
CMOS SRAM
Revision 2.0
February 1998
1
Document Title
512Kx8 bit Low Power and Low Voltage CMOS Static RAM
Revision History
Revision No.
0.0
1.0
2.0
Remark
Preliminary
Final
Final
History
Initial draft
Finalize
- Change datasheet format
- Erase low power part from product
- Erase 70ns part from KM68U4000B family
- Power dissipation Improved 0.7 to 1.0W
- V
IL
(MAX) improved 0.4 to 0.6V.
- I
CC2
decreased 50 to 45mA.
Revised
- I
CC1
decreased 20 to 25mA
Draft Data
December 17, 1996
Januarary 14, 1998
February 12, 1998
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
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