參數(shù)資料
型號(hào)： KM68FV1000
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 128K x8 Bit Super Low Power and Low Voltage Full CMOS Static RAM(128K x 8位超低功耗和低電壓CMOS 靜態(tài) RAM)
中文描述： 128K的x8位超低功耗和低電壓的CMOS全靜態(tài)RAM（128K的× 8位超低功耗和低電壓的CMOS靜態(tài)RAM）的
文件頁(yè)數(shù)： 5/11頁(yè)
文件大小： 207K
代理商： KM68FV1000
Revision 3.0
July 1998
CMOS SRAM
KM68FV1000, KM68FS1000, KM68FR1000 Family
5
AC OPERATING CONDITIONS
TEST CONDITIONS
(Test Load and Test Input/Output Reference)
Input pulse level : 0.4 to 2.2V for Vcc=3.3V, 3.0V, 2.5V
0.4 to 1.8V for Vcc=2.0V
Input rising and falling time : 5ns
Input and output reference voltage : 1.5V for Vcc=3.3V, 3.0V
1.1V for Vcc=2.5V
0.9V for Vcc=2.0V
Output load (See right) :C
L
=100pF+1TTL
C
L
=30pF+1TTL
C
L
1)
1. Including scope and jig capacitance
2. R
1
=3070
,
R
2
=3150
3. V
TM
=2.8V for V
CC
=3.0/3.3V
2.3V for V
CC
=2.5V
1.8V for V
CC
=2.0V
R
2
2)
R
1
2)
V
TM
3)
AC CHARACTERISTICS
(Commercial product :T
A
=0 to 70
°
C, Industrial product : T
A
=-40 to 85
°
C
KM68FV1000 Family : Vcc=3.0~3.6V, KM68FS1000 Family : Vcc=2.3~3.3V,
KM68FR1000 Family : Vcc=1.8~2.7V)
Parameter List
Symbol
Speed Bins
Units
70ns
85ns
100ns
120ns
150ns
300ns
Min Max Min Max Min Max Min Max Min Max Min Max
Read
Read cycle time
t
RC
70
-
85
-
100
-
120
-
150
-
300
-
ns
Address access time
t
AA
-
70
-
85
-
100
-
120
-
150
-
300
ns
Chip select to output
t
CO1
, t
CO2
-
70
-
85
-
100
-
120
-
150
-
300
ns
Output enable to valid output
t
OE
-
35
-
45
-
50
-
60
-
75
-
150
ns
Chip select to low-Z output
t
LZ1
, t
LZ2
10
-
10
-
10
-
10
-
20
-
50
-
ns
Output enable to low-Z output
t
OLZ
5
-
5
-
5
-
5
-
10
-
30
-
ns
Chip disable to high-Z output
t
HZ1
, t
HZ2
0
25
0
25
0
30
0
35
0
40
0
60
ns
Output disable to high-Z output
t
OHZ
0
25
0
25
0
30
0
35
0
40
0
60
ns
Output hold from address change
t
OH
10
-
15
-
15
-
15
-
15
-
30
-
ns
Write
Write cycle time
t
WC
70
-
85
-
100
-
120
-
150
-
300
-
ns
Chip select to end of write
t
CW
65
-
70
-
80
-
100
-
120
-
300
-
ns
Address set-up time
t
AS
0
-
0
-
0
-
0
-
0
-
0
-
ns
Address valid to end of write
t
AW
65
-
70
-
80
-
100
-
120
-
300
-
ns
Write pulse width
t
WP
55
-
60
-
70
-
80
-
100
-
200
-
ns
Write recovery time
t
WR
0
-
0
-
0
-
0
-
0
-
0
-
ns
Write to output high-Z
t
WHZ
0
25
0
25
0
30
0
35
0
40
0
60
ns
Data to write time overlap
t
DW
30
-
35
-
40
-
50
-
60
-
120
-
ns
Data hold from write time
t
DH
0
-
0
-
0
-
0
-
0
-
0
-
ns
End write to output low-Z
t
OW
5
-
5
-
5
-
5
-
5
-
20
-
ns
DATA RETENTION CHARACTERISTICS
1.
CS
1
≥
Vcc-0.2V, CS
2
≥
Vcc-0.2V(CS
1
controlled) or CS
2
≤
0.2V(CS
2
controlled)
2. Super low power product = 1
μ
A with special handling.
Item
Symbol
Test Condition
Min
Typ
Max
Unit
Vcc for data retention
V
DR
CS
1
≥
Vcc-0.2V
1)
Vcc=3.0V, CS
1
≥
Vcc-0.2V
1)
1.5
-
3.6
V
Data retention current
I
DR
-
-
5.0
2)
-
μ
A
Data retention set-up time
t
SDR
See data retention waveform
0
-
ns
Recovery time
t
RDR
t
RC
-
-
相關(guān)PDF資料
PDF描述
KM68FR2000 256Kx8 Bit Super Low Power and Low Voltage Full CMOS Static RAM(256K x 8位超低功耗和低電壓CMOS 靜態(tài) RAM)
KM68FS2000 256Kx8 Bit Super Low Power and Low Voltage Full CMOS Static RAM(256K x 8位超低功耗和低電壓CMOS 靜態(tài) RAM)
KM68FV2000 256Kx8 Bit Super Low Power and Low Voltage Full CMOS Static RAM(256K x 8位超低功耗和低電壓CMOS 靜態(tài) RAM)
KM68FU2000A 256K x8 Bit Super Low Power and Low Voltage Full CMOS Static RAM(256K x 8位超低功耗和低電壓CMOS 靜態(tài) RAM)
KM68S2000 256Kx8 Bit Low Power and Low Voltage CMOS Static RAM(256K x 8位低功耗和低電壓CMOS 靜態(tài) RAM)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KM68LC302AF20VCT 功能描述:微處理器 - MPU 68K INTGR COM PROC DMA RoHS:否 制造商:Atmel 處理器系列:SAMA5D31 核心:ARM Cortex A5 數(shù)據(jù)總線寬度:32 bit 最大時(shí)鐘頻率:536 MHz 程序存儲(chǔ)器大小:32 KB 數(shù)據(jù) RAM 大小:128 KB 接口類型:CAN, Ethernet, LIN, SPI,TWI, UART, USB 工作電源電壓:1.8 V to 3.3 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:FBGA-324
KM68LC302CAF16CT 功能描述:微處理器 - MPU 68K INTGR COM PROC DMA RoHS:否 制造商:Atmel 處理器系列:SAMA5D31 核心:ARM Cortex A5 數(shù)據(jù)總線寬度:32 bit 最大時(shí)鐘頻率:536 MHz 程序存儲(chǔ)器大小:32 KB 數(shù)據(jù) RAM 大小:128 KB 接口類型:CAN, Ethernet, LIN, SPI,TWI, UART, USB 工作電源電壓:1.8 V to 3.3 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:FBGA-324
KM68U1000B 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K X 8bit Low Power and Low Voltage CMOS Statinc RAM
KM68U1000BL 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K X 8bit Low Power and Low Voltage CMOS Statinc RAM
KM68U1000BL/L-L 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K X 8bit Low Power and Low Voltage CMOS Statinc RAM
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*