參數(shù)資料
型號(hào)： KM68FV1000
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 128K x8 Bit Super Low Power and Low Voltage Full CMOS Static RAM(128K x 8位超低功耗和低電壓CMOS 靜態(tài) RAM)
中文描述： 128K的x8位超低功耗和低電壓的CMOS全靜態(tài)RAM（128K的× 8位超低功耗和低電壓的CMOS靜態(tài)RAM）的
文件頁數(shù)： 2/11頁
文件大?。?/td> 207K
代理商： KM68FV1000
Revision 3.0
July 1998
CMOS SRAM
KM68FV1000, KM68FS1000, KM68FR1000 Family
2
128K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
GENERAL DESCRIPTION
The KM68FV1000, KM68FS1000 and KM68FR1000 families
are fabricated by SAMSUNG
′
s advanced Full CMOS process
technology. The families support various operating temperature
range and have various package types for user flexibility of sys-
tem design. The families also support low data retention voltage
for battery back-up operation with low data retention current.
FEATURES
Process Technology : Full CMOS
Organization : 128K x8 bit
Power Supply Voltage
KM68FV1000 Family : 3.0V ~ 3.6V
KM68FS1000 Family : 2.3V ~ 3.3V
KM68FR1000 Family : 1.8V ~ 2.7V
Low Data Retention Voltage : 1.5V(Min)
Three state output and TTL Compatible
Package Type : 32-SOP-525, 32-TSOP1-0820F,
32-TSOP1-0813.4F, 48-CSP
PRODUCT FAMILY
PIN DESCRIPTION
Name
Function
Name
Function
Name
Function
Name
Function
CS
1
,CS
2
Chip Select Input
OE
Output Enable Input
Vcc
Power
I/O
1
~I/O
8
Data Inputs/Outputs
N.C.
No Connection
WE
Write Enable Input
Vss
Ground
A
0
~A
16
Address Inputs
FUNCTIONAL BLOCK DIAGRAM
1. The parameter is measured with 30pF test load.
2. 1
μ
A for super low power version with special handling.
Product Family Operating Temperature Vcc Range
Speed(ns)
Power Dissipation
PKG Type
Standby
(I
SB1
, Max)
Operating
(I
CC2
, Max)
40mA
KM68FV1000
Commercial(0~70
°
C)
3.0~3.6V
70
1)
/85@V
CC
=3.3
±
0.3V
70
1)
/85@V
CC
=3.0
±
0.3V
120
1)
/150@V
CC
=2.5
±
0.2V
300
1)
@V
CC
=2.0
±
0.2V
70
1)
/85@V
CC
=3.3
±
0.3V
70
1)
/85/100@V
CC
=3.0
±
0.3V
120
1)
/150@V
CC
=2.5
±
0.2V
300
1)
@V
CC
=2.0
±
0.2V
5
μ
A
2)
32-SOP
32-TSOP1
Forward
32-sTSOP1
Forward
48-CSP
KM68FS1000
2.3~3.3V
35mA
30mA
KM68FR1000
1.8~2.7V
15mA
KM68FV1000I
Industrial(-40~85
°
C)
3.0~3.6V
40mA
KM68FS1000I
2.3~3.3V
35mA
30mA
KM68FR1000I
1.8~2.7V
15mA
A11
A9
A8
A13
A15
N.C
A16
A7
A6
A5
A4
OE
A0
A1
A2
A3
32-TSOP
Type1-Forward
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
N.C
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
VSS
VCC
A15
CS2
WE
A13
A8
A9
A11
OE
A10
CS1
I/O8
I/O7
I/O6
I/O5
I/O4
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32-SOP
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice.
Precharge circuit.
Memory array
1024 rows
128
×
8 columns
I/O Circuit
Column select
Clk gen.
Row
select
A10
A0
A1
A2
A3
A11
A9
A8
A13
A15
A16
A7
A6
A5
A4
CS1
CS2
WE
OE
I/O
1
Data
cont
Data
cont
I/O
8
A14
A12
Control
logic
A
0
A
1
CS
2
A
3
A
6
A
8
I/O
5
A
2
WE
A
4
A
7
I/O
1
I/O
6
NC
A
5
I/O
2
V
SS
V
CC
V
CC
V
SS
I/O
7
NC
NC
I/O
3
I/O
8
OE
CS
1
A
16
A
15
I/O
4
A
9
A
10
A
11
A
12
A
13
A
14
1
2
3
4
5
6
A
B
C
D
E
F
G
H
48-CSP - TOP VIEW
相關(guān)PDF資料
PDF描述
KM68FR2000 256Kx8 Bit Super Low Power and Low Voltage Full CMOS Static RAM(256K x 8位超低功耗和低電壓CMOS 靜態(tài) RAM)
KM68FS2000 256Kx8 Bit Super Low Power and Low Voltage Full CMOS Static RAM(256K x 8位超低功耗和低電壓CMOS 靜態(tài) RAM)
KM68FV2000 256Kx8 Bit Super Low Power and Low Voltage Full CMOS Static RAM(256K x 8位超低功耗和低電壓CMOS 靜態(tài) RAM)
KM68FU2000A 256K x8 Bit Super Low Power and Low Voltage Full CMOS Static RAM(256K x 8位超低功耗和低電壓CMOS 靜態(tài) RAM)
KM68S2000 256Kx8 Bit Low Power and Low Voltage CMOS Static RAM(256K x 8位低功耗和低電壓CMOS 靜態(tài) RAM)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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