參數(shù)資料
型號: KM681001B-20
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 128K x 8 Bit High-Speed CMOS Static RAM
中文描述: 128K的× 8位高速CMOS靜態(tài)RAM
文件頁數(shù): 4/9頁
文件大小: 181K
代理商: KM681001B-20
KM681001B
CMOS SRAM
PRELIMINARY
Rev 2.0
- 4 -
February 1998
TEST CONDITIONS
Parameter
Value
Input Pulse Levels
0V to 3V
Input Rise and Fall Times
3ns
Input and Output timing Reference Levels
1.5V
Output Loads
See below
AC CHARACTERISTICS
(T
A
=0 to 70
°
C, V
CC
=5.0V
±
10%, unless otherwise noted.)
READ CYCLE
NOTE : t
CO
=t
CO1
, t
CO2
/ t
LZ
=t
LZ1
, t
LZ2
/ t
HZ
=t
HZ1
, t
HZ2
Parameter
Symbol
KM681001B-15
KM681001B-20
Unit
Min
Max
Min
Max
Read Cycle Time
t
RC
15
-
20
-
ns
Address Access Time
t
AA
-
15
-
20
ns
Chip Select to Output
t
CO*
-
15
-
20
ns
Output Enable to Valid Output
t
OE
-
8
-
10
ns
Chip Enable to Low-Z Output
t
LZ*
3
-
3
-
ns
Output Enable to Low-Z Output
t
OLZ
0
-
0
-
ns
Chip Disable to High-Z Output
t
HZ*
0
6
0
8
ns
Output Disable to High-Z Output
t
OHZ
0
6
0
8
ns
Output Hold from Address Change
t
OH
3
-
3
-
ns
Chip Selection to Power Up Time
t
PU
0
-
0
-
ns
Chip Selection to Power DownTime
t
PD
-
15
-
20
ns
Output Loads(A)
Output Loads(B)
for t
HZ
, t
LZ
, t
WHZ
, t
OW
, t
OLZ
& t
OHZ
D
OUT
5pF*
480
255
+5.0V
D
OUT
30pF*
480
255
+5.0V
* Including Scope and Jig Capacitance
相關(guān)PDF資料
PDF描述
KM681001B 128K x 8 Bit High-Speed CMOS Static RAM
KM681001B-15 128K x 8 Bit High-Speed CMOS Static RAM
KM681001BLJ-15 x8 SRAM
KM681001BLJ-17 x8 SRAM
KM681001BLJ-20 x8 SRAM
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