參數(shù)資料
型號: KM681000B
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 128K x8 bit Low Power CMOS Static RAM(128K x8位低功耗 CMOS 靜態(tài) RAM)
中文描述: 128K的x8位低功耗CMOS靜態(tài)RAM(128K的x8位低功耗的CMOS靜態(tài)RAM)的
文件頁數(shù): 4/10頁
文件大小: 173K
代理商: KM681000B
KM681000B Family
CMOS SRAM
Revision 3.0
January 1998
RECOMMENDED DC OPERATING CONDITIONS
1)
Note
1. Commercial Product : T
A
=0 to 70
°
C, unless otherwise specified
Extended Product : T
A
=-25 to 85
°
C, unless otherwise specified
Industrial Product : T
A
=-40 to 85
°
C, unless otherwise specified
2. Overshoot : Vcc+3.0V in case of pulse width
30ns
3. Undershoot : -3.0V in case of pulse width
30ns
4. Overshoot and undershoot are sampled, not 100% tested
Item
Symbol
Min
Typ
Max
Unit
Supply voltage
Vcc
4.5
5.0
5.5
V
Ground
Vss
0
0
0
V
Input high voltage
V
IH
2.2
-
Vcc+0.5
2)
0.8
V
Input low voltage
V
IL
-0.5
3)
-
V
CAPACITANCE
1)
(f=1MHz, T
A
=25
°
C)
1. Capacitance is sampled, not 100% tested
Item
Symbol
Test Condition
Min
Max
Unit
Input capacitance
C
IN
V
IN
=0V
-
6
pF
Input/Output capacitance
C
IO
V
IO
=0V
-
8
pF
DC AND OPERATING CHARACTERISTICS
1. 20mA for Exteneded and Industrial Products
2. 15mA for Extended and Industrial Products
Item
Symbol
Test Conditions
Min
Typ
Max Unit
Input leakage current
I
LI
V
IN
=Vss to Vcc
-1
-
1
μ
A
Output leakage current
I
LO
CS
1
=V
IH
or CS
2
=V
IL
or OE=V
IH
or WE=V
IL,
V
IO=
V
ss
to V
cc
-1
-
1
μ
A
Operating power supply
I
CC
CS
1
=V
IL
, CS
2
=V
IH
, I
IO
=0mA, V
IN
= V
IL
or V
IH
-
7
15
1)
mA
Average operating current
I
CC1
Cycle time=1
μ
s, 100% duty, I
IO
=0mA, CS
1
0.2V, CS
2
Vcc-0.2V
,
V
IN
0.2V
or V
IN
Vcc-0.2V
-
-
10
2)
70
mA
I
CC2
Cycle time=Min, 100% duty, I
IO
=0mA, CS
1
=V
IL
, CS
2
=V
IH,
V
IN
=V
IL
or V
IH
-
-
mA
Output low voltage
V
OL
I
OL
=2.1mA
-
-
0.4
V
Output high voltage
V
OH
I
OH
=-1.0mA
2.4
-
-
V
Standby Current(TTL)
I
SB
CS
1
=V
IH,
CS
2
=V
IL
, Other input=V
IL
or V
IH
-
-
3
mA
Standby Current(CMOS)
I
SB1
CS
1
Vcc-0.2V, CS
2
Vcc-0.2V or CS
2
0.2V
Other input=0~Vcc
KM681000BL
KM681000BL-L
-
-
-
-
100
20
μ
A
KM681000BLE
KM681000BLE-L
-
-
-
-
100
50
μ
A
KM681000BLI
KM681000BLI-L
-
-
-
-
100
50
μ
A
相關(guān)PDF資料
PDF描述
KM681000C 128K x8 bit Low Power CMOS Static RAM(128K x8位低功耗 CMOS 靜態(tài) RAM)
KM681001B-20 128K x 8 Bit High-Speed CMOS Static RAM
KM681001B 128K x 8 Bit High-Speed CMOS Static RAM
KM681001B-15 128K x 8 Bit High-Speed CMOS Static RAM
KM681001BLJ-15 x8 SRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KM681000BL 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x8 bit Low Power CMOS Static RAM
KM681000BLE 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x8 bit Low Power CMOS Static RAM
KM681000BLE-L 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x8 bit Low Power CMOS Static RAM
KM681000BLG-5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x8 bit Low Power CMOS Static RAM
KM681000BLG-5L 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x8 bit Low Power CMOS Static RAM