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參數(shù)資料
| 型號： | KM681000B |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128K x8 bit Low Power CMOS Static RAM(128K x8位低功耗 CMOS 靜態(tài) RAM) |
| 中文描述： | 128K的x8位低功耗CMOS靜態(tài)RAM（128K的x8位低功耗的CMOS靜態(tài)RAM）的 |
| 文件頁數(shù)： | 2/10頁 |
| 文件大小： | 173K |
| 代理商： | KM681000B |
KM681000B Family
CMOS SRAM
Revision 3.0
January 1998
128K x8 bit Low Power CMOS Static RAM
GENERAL DESCRIPTION
The KM681000B families are fabricated by SAMSUNG
′
s
advanced CMOS process technology. The families support
various operating temperature ranges and have various
package types for user flexibility of system design. The fam-
ilies also support low data retention voltage for battery back-
up operation with low data retention current.
FEATURES
Process Technology : Poly Load
Organization : 128Kx8
Power Supply Voltage : 4.5~5.5V
Low Data Retention Voltage : 2V(Min)
Three state output and TTL Compatible
Package Type : 32-DIP-600, 32-SOP-525
32-TSOP1-0820F/R
PIN DESCRIPTION
Name
CS
1
,CS
2
Function
Chip Select Inputs
OE
Output Enable Input
WE
Write Enable Input
A
0
~A
16
Address Inputs
I/O
1
~I/O
8
Data Inputs/Outputs
Vcc
Power
Vss
Ground
N.C
No Connection
PRODUCT FAMILY
Product Family
Operating Temperature
Vcc Range
Speed(ns)
Power Dissipation
PKG Type
Standby
(I
SB1
, Max)
Operating
(I
CC2
, Max)
KM681000BL
Commercial(0~70
°
C)
4.5 to 5.5V
55/70
100
μ
A
20
μ
A
100
μ
A
70mA
32-DIP,32-SOP
32-TSOP1 R/F
KM681000BL-L
KM681000BLE
Extended(-25~85
°
C)
70
32-SOP
32-TSOP1 R/F
KM681000BLE-L
50
μ
A
100
μ
A
50
μ
A
KM681000BLI
Industrial(-40~85
°
C)
70
32-SOP
32-TSOP1 R/F
KM681000BLI-L
32-TSOP
Type1-Reverse
A11
A9
A8
A13
A15
VNC
A16
A7
A6
A5
A4
OE
A0
A1
A2
A3
32-TSOP
Type1 - Forward
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
N.C
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
VSS
VCC
A15
CS2
WE
A13
A8
A9
A11
OE
A10
CS1
I/O8
I/O7
I/O6
I/O5
I/O4
32-DIP
32-SOP
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
A11
A9
A8
A13
A15
VNC
A12
A7
A6
A5
A4
OE
A0
A1
A2
A3
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice.
FUNCTIONAL BLOCK DIAGRAM
Precharge circuit.
Memory array
512 rows
256
×
8 columns
I/O Circuit
Column select
Clk gen.
Row
select
A0 A1 A2
A8 A9
A11
A10
A4
A5
A6
A7
A12
A13
A15
CS1
CS2
WE
OE
I/O
1
Data
cont
Data
cont
I/O
8
A14
A16
Control
logic
A3
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| KM681000BL | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x8 bit Low Power CMOS Static RAM |
| KM681000BLE | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x8 bit Low Power CMOS Static RAM |
| KM681000BLE-L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x8 bit Low Power CMOS Static RAM |
| KM681000BLG-5 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x8 bit Low Power CMOS Static RAM |
| KM681000BLG-5L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x8 bit Low Power CMOS Static RAM |
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