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參數(shù)資料
| 型號(hào)： | KM616V4002BI |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)(256K x 16 位高速CMOS 靜態(tài) RAM(3.3V 工作)) |
| 中文描述： | 256K × 16位高速CMOS靜態(tài)RAM（3.3V的工作）（256K × 16位高速的CMOS靜態(tài)隨機(jī)存儲(chǔ)器（3.3V的工作）） |
| 文件頁(yè)數(shù)： | 2/9頁(yè) |
| 文件大?。?/td> | 157K |
| 代理商： | KM616V4002BI |
KM616V4002B/BL, KM616V4002BI/BLI
CMOS SRAM
PRELIMPreliminaryPPPPPPPPPINARY
Rev 2.1
June 1998
- 2 -
PIN FUNCTION
Pin Name
Pin Function
A
0
- A
17
Address Inputs
WE
Write Enable
CS
Chip Select
OE
Output Enable
LB
Lower-byte Control(I/O
1
~I/O
8
)
UB
Upper-byte Control(I/O
9
~I/O
16
)
I/O
1
~ I/O
16
Data Inputs/Outputs
V
CC
Power(+3.3V)
V
SS
Ground
N.C
No Connection
256K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)
FEATURES
Fast Access Time 10,12,15ns(Max.)
Low Power Dissipation
Standby (TTL) : 50mA(Max.)
(CMOS) : 10mA(Max.)
1.2mA(Max.)- L-Ver.
Operating KM616V4002B/BL - 10 : 250mA(Max.)
KM616V4002B/BL - 12 : 245mA(Max.)
KM616V4002B/BL - 15 : 240mA(Max.)
Single 3.3
±
0.3V Power Supply
TTL Compatible Inputs and Outputs
Fully Static Operation
- No Clock or Refresh required
Three State Outputs
Low Data Retention Voltage : 2V(Min.) - L-Ver. Only
Center Power/Ground Pin Configuration
Data Byte Control : LB : I/O
1
~ I/O
8,
UB : I/O
9
~ I/O
16
Standard Pin Configuration
KM616V4002BJ : 44-SOJ-400
KM616V4002BT : 44-TSOP2-400F
The KM616V4002B is a 4,194,304-bit high-speed Static Ran-
dom Access Memory organized as 262,144 words by 16 bits.
The KM616V4002B uses 16 common input and output lines
and has an output enable pin which operates faster than
address access time at read cycle. Also it allows that lower and
upper byte access by data byte control(UB, LB). The device is
fabricated using SAMSUNG
′
s advanced CMOS process and
designed for high-speed circuit technology. It is particularly well
suited for use in high-density high-speed system applications.
The KM616V4002B is packaged in a 400mil 44-pin plastic SOJ
or TSOP(II) forward.
GENERAL DESCRIPTION
Clk Gen.
I/O
1
~I/O
8
OE
UB
LB
CS
PIN CONFIGURATION
(Top View)
SOJ/
TSOP2
FUNCTIONAL BLOCK DIAGRAM
R
Data
Cont.
Data
Cont.
Column Select
CLK
Gen.
Pre-Charge Circuit
Memory Array
512 Rows
512x16 Columns
I/O Circuit &
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
A
17
A
16
A
15
OE
UB
LB
I/O
16
I/O
15
I/O
14
I/O
13
Vss
Vcc
I/O
12
I/O
11
I/O
10
I/O
9
N.C
A
14
A
13
A
12
A
11
A
10
A
0
A
1
A
2
A
3
A
4
CS
I/O
1
I/O
2
I/O
3
I/O
4
Vcc
Vss
I/O
5
I/O
6
I/O
7
I/O
8
WE
A
5
A
6
A
7
A
8
A
9
I/O
9
~I/O
16
WE
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A
A
A
14
A
A
9
A
11
A
13
15
A
17
KM616V4002B/BL -10/12/15
Commercial Temp.
KM616V4002BI/BLI -10/12/15
Industrial Temp.
ORDERING INFORMATION
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM616V4002BT15 | 制造商:SAMSUNG 功能描述:* |
| KM616V4002BT-15 | 制造商:Samsung Electro-Mechanics 功能描述:Static RAM, 256Kx16, 44 Pin, Plastic, TSOP 制造商:Seco Electronic Device 功能描述:Static RAM, 256Kx16, 44 Pin, Plastic, TSOP |
| KM6-19-20PN | 制造商:Amphenol Corporation 功能描述:KM AUSTRALIAN PRODUCT - Bulk |
| KM6-19-20PN-FO | 制造商:Amphenol Corporation 功能描述:KM AUSTRALIAN PRODUCT - Bulk |
| KM6-19-20PN-MK2 | 制造商:Amphenol Corporation 功能描述:KM AUSTRALIAN PRODUCT - Bulk |
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