- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374356 > KM616V4002BI (SAMSUNG SEMICONDUCTOR CO. LTD.) 256K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)(256K x 16 位高速CMOS 靜態(tài) RAM(3.3V 工作)) PDF資料下載
參數(shù)資料
| 型號(hào)： | KM616V4002BI |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)(256K x 16 位高速CMOS 靜態(tài) RAM(3.3V 工作)) |
| 中文描述： | 256K × 16位高速CMOS靜態(tài)RAM（3.3V的工作）（256K × 16位高速的CMOS靜態(tài)隨機(jī)存儲(chǔ)器（3.3V的工作）） |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 157K |
| 代理商： | KM616V4002BI |
KM616V4002B/BL, KM616V4002BI/BLI
CMOS SRAM
PRELIMPreliminaryPPPPPPPPPINARY
Rev 2.1
June 1998
- 1 -
Document Title
256Kx16 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out.
Operated at Commercial and Industrial Temperature Range.
Revision History
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
Rev No.
Rev. 0.0
Rev.1.0
Rev. 2.0
Rev.2.1
Remark
Design Target
Preliminary
Final
Final
History
Initial release with Design Target.
Release to Preliminary Data Sheet.
1. Replace Design Target to Preliminary.
Release to Final Data Sheet
1. Delete Preliminary
2. Add 30pF capacitive in test load
3. Relex DC characteristics
Item
I
CC
Change operating current at Industrial Temperature range.
Previous spec. Changed spec.
Items (10/12/15ns part) (10/12/15ns part)
I
CC
250/245/240mA 275/270/265mA
Previous
240mA
230mA
220mA
40mA
10 / 1mA
0.9mA
Current
250mA
245mA
240mA
50mA
10 / 1.2mA
1.0mA
10ns
12ns
15ns
f=max.
f=0
V
DR
=3.0V
I
SB
I
SB1
I
DR
Draft Data
Jan. 1st, 1997
Jun. 1st, 1997
Feb.11th.1998
Jun. 27th 1998
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM62U256CLG-10L | 32Kx8 bit Low Power AND Low Vcc CMOS Static RAM |
| KM62U256CLG-8L | 32Kx8 bit Low Power AND Low Vcc CMOS Static RAM |
| KM62U256C | 32K x 8 Bit Low Power CMOS Static RAM(32K x 8位低功耗CMOS 靜態(tài)RAM) |
| KM62V256C | 32K x 8 Bit Low Power CMOS Static RAM(32K x 8位低功耗CMOS 靜態(tài)RAM) |
| KM62U256D | 32K x 8 Bit Low Power CMOS Static RAM(32K x 8位低功耗CMOS 靜態(tài)RAM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM616V4002BT15 | 制造商:SAMSUNG 功能描述:* |
| KM616V4002BT-15 | 制造商:Samsung Electro-Mechanics 功能描述:Static RAM, 256Kx16, 44 Pin, Plastic, TSOP 制造商:Seco Electronic Device 功能描述:Static RAM, 256Kx16, 44 Pin, Plastic, TSOP |
| KM6-19-20PN | 制造商:Amphenol Corporation 功能描述:KM AUSTRALIAN PRODUCT - Bulk |
| KM6-19-20PN-FO | 制造商:Amphenol Corporation 功能描述:KM AUSTRALIAN PRODUCT - Bulk |
| KM6-19-20PN-MK2 | 制造商:Amphenol Corporation 功能描述:KM AUSTRALIAN PRODUCT - Bulk |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。