參數(shù)資料
型號(hào)： KM616V1002B
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)(64K x 16 位高速CMOS 靜態(tài) RAM(3.3V 工作))
中文描述： 64K的× 16位高速CMOS靜態(tài)RAM（3.3V的工作）（64K的× 16位高速的CMOS靜態(tài)隨機(jī)存儲(chǔ)器（3.3V的工作））
文件頁(yè)數(shù)： 3/9頁(yè)
文件大?。?/td> 158K
代理商： KM616V1002B
KM616V1002B/BL, KM616V1002BI/BLI
CMOS SRAM
PRELIMINARY
PPreliminary
Rev 2.1
- 3 -
August 1998
ABSOLUTE MAXIMUM RATINGS*
*
Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Rating
Unit
Voltage on Any Pin Relative to V
SS
V
IN
,
V
OUT
-0.5 to 4.6
V
Voltage on V
CC
Supply Relative to V
SS
V
CC
-0.5 to 4.6
V
Power Dissipation
P
D
1.0
W
Storage Temperature
T
STG
-65 to 150
°
C
°
C
°
C
Operating Temperature
Commercial
T
A
0 to 70
Industrial
T
A
-40 to 85
RECOMMENDED DC OPERATING CONDITIONS
(T
A
=0 to 70
°
C)
NOTE: The above parameters are also guaranteed at industrial temperature range.
* V
IL
(Min) = -2.0V a.c(Pulse Width
≤
6ns) for I
≤
20mA
** V
IH
(Max) = V
CC +
2.0V a.c (Pulse Width
≤
6ns) for I
≤
20mA
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage
V
CC
3.0
3.3
3.6
V
Ground
V
SS
0
0
0
V
Input High Voltage
V
IH
2.0
-
V
CC
+0.3**
V
Input Low Voltage
V
IL
-0.3*
-
0.8
V
DC AND OPERATING CHARACTERISTICS
(T
A
=0 to 70
°
C, Vcc=3.3
±
0.3V, unless otherwise specified)
NOTE: The above parameters are also guaranteed at industrial temperature range.
Parameter
Symbol
Test Conditions
Min
Max
Unit
Input Leakage Current
I
LI
V
IN
=V
SS
to
V
CC
-2
2
μ
A
μ
A
Output Leakage Current
I
LO
CS=V
IH
or OE=V
IH
or WE=V
IL
V
OUT
=V
SS
to
V
CC
-2
2
Operating Current
I
CC
Min. Cycle, 100% Duty
CS=V
IL,
V
IN
=V
IH
or
V
IL,
I
OUT
=0mA
8ns
-
200
mA
10ns
-
195
12ns
-
190
Standby Current
I
SB
Min. Cycle, CS=V
IH
-
50
mA
I
SB1
f=0MHz, CS
≥
V
CC
-0.2V,
V
IN
≥
V
CC
-0.2V or V
IN
≤
0.2V
Normal
-
5
mA
L-Ver.
-
0.7
Output Low Voltage Level
V
OL
I
OL
=8mA
-
0.4
V
Output High Voltage Level
V
OH
I
OH
=-4mA
2.4
-
V
CAPACITANCE*
(T
A
=25
°
C, f=1.0MHz)
*
NOTE : Capacitance is sampled and not 100% tested.
Item
Symbol
Test Conditions
MIN
Max
Unit
Input/Output Capacitance
C
I/O
V
I/O
=0V
-
8
pF
Input Capacitance
C
IN
V
IN
=0V
-
6
pF
相關(guān)PDF資料
PDF描述
KM616V1002BI 64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)(64K x 16 位高速CMOS 靜態(tài) RAM(3.3V 工作))
KM616V1002C 64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)(64K x 16 位高速CMOS 靜態(tài) RAM(3.3V 工作))
KM616V1002CI 64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)(64K x 16 位高速CMOS 靜態(tài) RAM(3.3V 工作))
KM616V4002B 256K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)(256K x 16 位高速CMOS 靜態(tài) RAM(3.3V 工作))
KM616V4002BI 256K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)(256K x 16 位高速CMOS 靜態(tài) RAM(3.3V 工作))
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