參數(shù)資料
型號: KM616U2000
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 128K x16 Bit Low Power and Low Voltage Full CMOS Static RAM(128K x 16位低功耗低電壓CMOS 靜態(tài)RAM)
中文描述: 128K的x16位低功耗和低電壓的CMOS全靜態(tài)RAM(128K的× 16位低功耗低電壓的CMOS靜態(tài)RAM)的
文件頁數(shù): 1/9頁
文件大?。?/td> 114K
代理商: KM616U2000
CMOS SRAM
Preliminary
KM616U2000 Family
Revision 0.1
December 1997
Document Title
128K x16 bit Low Power and Low Voltage CMOS Static RAM
Revision History
Revision No.
0.0
0.1
Remark
Preliminary
Preliminary
History
Initial Draft
Revise
- Increased operating current(I
CC1
):20mA
25mA
Draft Data
October 1, 1997
December 9, 1997
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
相關(guān)PDF資料
PDF描述
KM616U4000BZ 256K x 16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低電壓CMOS 靜態(tài) RAM)
KM616V4000BZ 256K x 16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低電壓CMOS 靜態(tài) RAM)
KM616U4000B 256K x 16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低電壓CMOS 靜態(tài) RAM)
KM616V4000B 256K x 16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低電壓CMOS 靜態(tài) RAM)
KM616U4000C 256K x 16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低電壓CMOS 靜態(tài) RAM)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KM616V1000BLTI-7L 制造商:Samsung Semiconductor 功能描述:
KM616V1002AT-12 制造商:Samsung Electro-Mechanics 功能描述:Static RAM, 64Kx16, 44 Pin, Plastic, TSOP 制造商:SEC 功能描述:Static RAM, 64Kx16, 44 Pin, Plastic, TSOP
KM616V1002AT-15 制造商:SEC 功能描述:Static RAM, 64Kx16, 44 Pin, Plastic, TSOP
KM616V1002BT-10 制造商:SEC 功能描述:
KM616V4002BT15 制造商:SAMSUNG 功能描述:*