參數(shù)資料
型號： KM616V4000BZ
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 256K x 16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低電壓CMOS 靜態(tài) RAM)
中文描述： 256K × 16位低功耗和低電壓的CMOS靜態(tài)RAM（256K × 16位低功耗低電壓的CMOS靜態(tài)RAM）的
文件頁數(shù)： 1/9頁
文件大小： 151K
代理商： KM616V4000BZ
Revision 0.11
February 1998
CMOS SRAM
KM616V4000BZ, KM616U4000BZ Family
Preliminary
1
Document Title
256Kx16 Low Voltage & Low Power SRAM Datasheets for 48-CSP
Revision History
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
Revision No
0.0
0.1
0.11
Remark
Preliminary
Preliminary
History
Initial draft
Revised
- Change datasheet format
- Remove commercial part from product
- Power dissipation improved 0.7 to 1.0W
- V
IL
(MAX) improved 0.4 to 0.6V.
- I
CC2
decreased 90 to 60mA.
- I
CC1
(Read/Write) change 20/40 to 10/45mA
- I
CC
Read change 20 to 10mA, and remove write value.
Errata correction
Draft Data
February 4,1997
February 12, 1998
August 17, 1998
相關(guān)PDF資料
PDF描述
KM616U4000B 256K x 16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低電壓CMOS 靜態(tài) RAM)
KM616V4000B 256K x 16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低電壓CMOS 靜態(tài) RAM)
KM616U4000C 256K x 16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低電壓CMOS 靜態(tài) RAM)
KM616V4000C 256K x 16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低電壓CMOS 靜態(tài) RAM)
KM616U4010C 256Kx16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低電壓CMOS 靜態(tài) RAM)
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