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參數(shù)資料
| 型號(hào)： | KM6164000BLTI-10L |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Kx16 bit Low Power CMOS Static RAM |
| 中文描述： | 256Kx16位低功耗CMOS靜態(tài)RAM |
| 文件頁(yè)數(shù)： | 2/9頁(yè) |
| 文件大?。?/td> | 151K |
| 代理商： | KM6164000BLTI-10L |
KM6164000B Family
CMOS SRAM
Revision 4.01
June 1998
2
256Kx16 bit Low Power CMOS Static RAM
GENERAL DESCRIPTION
The KM616V4000B families are fabricated by SAMSUNG
′
s
advanced CMOS process technology. The families support
various operating temperature ranges and small package
types for user flexibility of system design. The families also
support low data retention voltage for battery back-up opera-
tion with low data retention current.
FEATURES
Process Technology : TFT
Organization : 256Kx16
Power Supply Voltage : 4.5~5.5V
Low Data Retention Voltage : 2V(Min)
Three state output and TTL Compatible
Package Type : 44-TSOP2-400F/R
PIN DESCRIPTION
Name
Function
Name
Function
CS
Chip Select Input
Vcc
Power
OE
Output Enable Input
Vss
Ground
WE
Write Enable Input
UB
Upper Byte(I/O
9~16
)
A
0
~A
17
Address Inputs
LB
Lower Byte (I/O
1~8
)
I/O
1
~I/O
16
Data Inputs/Outputs
N.C
No Connection
PRODUCT FAMILY
1. The parameter is measured with 50pF test load.
Product Family
Operating Temperature
Vcc Range
Speed(ns)
Power Dissipation
PKG Type
Standby
(I
SB1
, Max)
20
μ
A
50
μ
A
Operating
(I
CC2
, Max)
KM6164000BL-L
Commercial(0~70
°
C)
Industrial(-40~85
°
C)
4.5~5.5V
55
1)
/70
130mA
44-TSOP2-F/R
KM6164000BLI-L
4.5~5.5V
70/100
FUNCTIONAL BLOCK DIAGRAM
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice.
A4
A3
A2
A1
A0
CS
I/OI
I/O2
I/O3
I/O4
Vcc
Vss
I/O5
I/O6
I/O7
I/O8
WE
A17
A16
A15
A14
A13
A5
A6
A7
OE
UB
LB
I/O16
I/O15
I/O14
I/O13
Vss
Vcc
I/O12
I/O11
I/O10
I/O9
N.C
A8
A9
A10
A11
44-TSOP2
Forward
44-TSOP2
Reverse
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
A5
A6
A7
OE
UB
LB
I/O16
I/O15
I/O14
I/O13
Vss
Vcc
I/O12
I/O11
I/O10
I/O9
N.C
A8
A9
A10
A11
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
A12
A12
A4
A3
A2
A1
A0
CS
I/OI
I/O2
I/O3
I/O4
Vcc
Vss
I/O5
I/O6
I/O7
I/O8
WE
A17
A16
A15
A14
A13
Clk gen.
Row
select
A8 A9 A10 A5 A6
A4
A7
A13
A14
A0
A1
A15
A16
A17
A2
I/O
1
~I/O
8
A3
Data
cont
Data
cont
Data
cont
I/O
9
~I/O
16
Vcc
Vss
A4
A12
Precharge circuit.
Memory array
1024 rows
256
×
16 columns
I/O Circuit
Column select
WE
OE
UB
CS
LB
Control
logic
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM6164000BLTI-7L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx16 bit Low Power CMOS Static RAM |
| KM6164002 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:CMOS SRAM |
| KM6164002AJ-20 | 制造商:SEC 功能描述: |
| KM6164002E | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:CMOS SRAM |
| KM6164002I | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:CMOS SRAM |
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