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參數(shù)資料
| 型號(hào)： | KM48V8100C |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 8M x 8Bit CMOS Dynamic RAM with Fast Page Mode(8M x 8位 CMOS 動(dòng)態(tài)RAM(帶快速頁(yè)模式)) |
| 中文描述： | 8米× 8位的快速頁(yè)面模式的CMOS動(dòng)態(tài)RAM（8米× 8位的CMOS動(dòng)態(tài)隨機(jī)存儲(chǔ)器（帶快速頁(yè)模式）） |
| 文件頁(yè)數(shù)： | 5/20頁(yè) |
| 文件大小： | 344K |
| 代理商： | KM48V8100C |
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KM48V8000C,KM48V8100C
CMOS DRAM
CAPACITANCE
(T
A
=25
°
C, V
CC
=3.3V, f=1MHz)
Parameter
Symbol
Min
Max
Units
Input capacitance [A0 ~ A12]
C
IN1
-
5
pF
Input capacitance [RAS, CAS, W, OE]
C
IN2
-
7
pF
Output capacitance [DQ0 - DQ7]
C
DQ
-
7
pF
Test condition : V
CC
=3.3V
±
0.3V, Vih/Vil=2.2/0.7V, Voh/Vol=2.0/0.8V
Parameter
Symbol
-45
-5
-6
Units
Note
Min
Max
Min
Max
Min
Max
Random read or write cycle time
t
RC
t
RWC
80
90
110
ns
Read-modify-write cycle time
115
133
153
ns
Access time from RAS
t
RAC
t
CAC
45
50
60
ns
3,4,10
Access time from CAS
12
13
15
ns
3,4,5
Access time from column address
t
AA
t
CLZ
23
25
30
ns
3,10
CAS to output in Low-Z
0
0
0
ns
3
Output buffer turn-off delay
t
OFF
t
T
0
13
0
13
0
13
ns
6
Transition time (rise and fall)
1
50
1
50
1
50
ns
2
RAS precharge time
t
RP
t
RAS
25
30
40
ns
RAS pulse width
45
10K
50
10K
60
10K
ns
RAS hold time
t
RSH
t
CSH
12
13
15
ns
CAS hold time
45
50
60
ns
CAS pulse width
t
CAS
t
RCD
12
10K
13
10K
15
10K
ns
RAS to CAS delay time
18
33
20
37
20
45
ns
4
RAS to column address delay time
t
RAD
t
CRP
13
22
15
25
15
30
ns
10
CAS to RAS precharge time
5
5
5
ns
Row address set-up time
t
ASR
t
RAH
0
0
0
ns
Row address hold time
8
10
10
ns
Column address set-up time
t
ASC
t
CAH
0
0
0
ns
Column address hold time
8
10
10
ns
Column address to RAS lead time
t
RAL
t
RCS
23
25
30
ns
Read command set-up time
0
0
0
ns
Read command hold time referenced to CAS
t
RCH
t
RRH
0
0
0
ns
8
Read command hold time referenced to RAS
0
0
0
ns
8
Write command hold time
t
WCH
t
WP
8
10
10
ns
Write command pulse width
8
10
10
ns
Write command to RAS lead time
t
RWL
t
CWL
13
15
15
ns
Write command to CAS lead time
12
13
15
ns
Data set-up time
t
DS
t
DH
0
0
0
ns
9
Data hold time
10
10
10
ns
9
AC CHARACTERISTICS
(0
°
C
≤
T
A
≤
70
°
C, See note 2)
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