- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373158 > KM611001 (SAMSUNG SEMICONDUCTOR CO. LTD.) 1M x 1Bit High-Speed CMOS SRAM PDF資料下載
參數(shù)資料
| 型號： | KM611001 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1M x 1Bit High-Speed CMOS SRAM |
| 中文描述： | 100萬x 1位高速CMOS SRAM的 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 95K |
| 代理商： | KM611001 |
KM611001/L
CMOS SRAM
Rev 2.0
July-1996
1
Fast Access Time 20, 25, 35ns(Max.)
Low Power Dissipation
Standby (TTL) : 40 mA(Max.)
(CMOS): 2 mA(Max.)
0.5 mA(Max.) - L-ver.
OperatingKM611001/L -20 : 130 mA(Max.)
KM611001/L -25 : 110 mA(Max.)
KM611001/L -35 : 100 mA(Max.)
Single 5.0V ± 10% Power Supply
TTL Compatible Inputs and Outputs
Fully Static Operation
- No Clock or Refresh required
Three State Outputs
Low Data Retention Voltage : 2V(Min.)- L-Ver Only
Standard Pin Configuration
KM611001P/LP : 28-DIP-400
KM611001J/LJ : 28-SOJ-400A
The KM611001/L is a 1,048,576-bit high-speed Static
Random Access Memory organized as 1,048,576
words by 1 bit. The KM611001/L has separate input
and output lines for fast read and write access. The
device is fabricated using Samsung`s advanced
CMOS process and designed for high-speed circuit
technology. It is particularly well suited for use in high-
density
high-speed
system
KM611001/L is packaged in a 400 mil 28-pin plastic DIP
or SOJ.
applications.
The
1M x 1Bit High-Speed CMOS SRAM
FEATURES
FUNCTIONAL BLOCK DIAGRAM
PIN CONFIGURATION
(TOP VIEW)
Address Inputs
Write Enable
Chip Select
Data Input
Data Output
Power (+5V)
Ground
No Connection
Pin Name
A0-A19
/WE
/CS
DIN
DOUT
Vcc
Vss
N.C
Pin Function
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
SOJ/DIP
A0
A1
A2
A3
A4
A5
N.C
A6
A7
A8
A9
DOUT
/WE
Vss
Vcc
A19
A18
A17
A16
A15
A14
N.C
A13
A12
A11
A10
DIN
/CS
PIN DESCRIPTION
GENERAL DESCRIPTION
A0
A1
A2
A3
A5
A6
A7
A8
A9
DIN
MEMORY ARRAY
512 Rows
2048x1 Columns
Pre-Charge Circuit
R
Data
Cont.
A4 A10 A11 A12 A13 A14 A15 A16 A17 A18 A19
/CS
/WE
I/O Circuit
Column Select
Clk Gen.
Clk
Gen.
DOUT
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM611001L | 1M x 1Bit High-Speed CMOS SRAM |
| KM6164000BLRI-7L | 256Kx16 bit Low Power CMOS Static RAM |
| KM6164000BLT-5L | 256Kx16 bit Low Power CMOS Static RAM |
| KM6164000BLT-7L | 256Kx16 bit Low Power CMOS Static RAM |
| KM6164000BLTI-10L | 256Kx16 bit Low Power CMOS Static RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM611001L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 1Bit High-Speed CMOS SRAM |
| KM6161002A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64K x 16 Bit Speed Static RAM (5V Operating), Revolutionary Pin Out |
| KM6161002A-12 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64K x 16 Bit Speed Static RAM (5V Operating), Revolutionary Pin Out |
| KM6161002A-15 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64K x 16 Bit Speed Static RAM (5V Operating), Revolutionary Pin Out |
| KM6161002A-20 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64K x 16 Bit Speed Static RAM (5V Operating), Revolutionary Pin Out |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。