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參數(shù)資料
| 型號： | KM48V514D |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512K x 8Bit CMOS Dynamic RAM with Extended Data Out(高速512K x 8位 CMOS 動態(tài)RAM(帶擴(kuò)展數(shù)據(jù)輸出)) |
| 中文描述： | 為512k × 8位的CMOS動態(tài)隨機(jī)存儲器的擴(kuò)展數(shù)據(jù)輸出（高速為512k × 8位的CMOS動態(tài)隨機(jī)存儲器（帶擴(kuò)展數(shù)據(jù)輸出）） |
| 文件頁數(shù)： | 6/21頁 |
| 文件大?。?/td> | 372K |
| 代理商： | KM48V514D |
KM48C514D, KM48V514D
CMOS DRAM
AC CHARACTERISTICS
(Continued)
Note) *1 : 5V only
Parameter
Symbol
-5
*1
-6
-7
Units
Notes
Min
Max
Min
Max
Min
Max
Data set-up time
t
DS
t
DH
t
REF
t
REF
t
CWD
t
RWD
t
AWD
t
CPWD
t
CSR
t
CHR
t
RPC
t
CPT
t
CPA
t
HPC
t
HPRWC
t
CP
t
RASP
t
RHCP
t
OEA
t
OED
t
OEZ
t
OLZ
t
OEH
t
DOH
t
REZ
t
WEZ
t
WED
t
OCH
t
CHO
t
OEP
t
WPE
t
RASS
t
RPS
t
CHS
0
0
0
ns
9
Data hold time
8
10
15
ns
9
Refresh period (Normal)
16
16
16
ms
Refresh period (L-ver)
128
128
128
ms
CAS to W delay time
32
32
42
ns
7
RAS to W delay time
67
77
92
ns
7
Column address to W delay time
42
47
57
ns
7
CAS precharge to W delay time
45
52
62
ns
7
CAS set-up time (CAS -before-RAS refresh)
5
5
5
ns
CAS hold time (CAS -before-RAS refresh)
10
10
10
ns
RAS to CAS precharge time
5
5
5
ns
CAS precharge time (C-B-R counter test cycle)
20
20
25
ns
Access time from CAS precharge
28
35
40
ns
3
Hyper Page mode cycle time
20
25
30
ns
11
Hyper Page read-modify-write cycle time
47
56
71
ns
11
CAS precharge time (Hyper Page cycle)
8
10
10
ns
RAS pulse width (Hyper Page cycle)
50
100K
60
100K
70
100K
ns
RAS hold time from CAS precharge
30
35
40
ns
OE access time
15
15
20
ns
3
OE to data delay
13
13
18
ns
Output buffer turn off delay time from OE
3
13
3
13
3
18
ns
6
OE to output in low-Z
3
3
3
ns
OE command hold time
15
15
20
ns
Output data hold time
5
5
5
ns
Output buffer turn off delay from RAS
3
15
3
15
3
20
ns
6,12
Output buffer turn off delay from W
3
13
3
13
3
18
ns
6
W to data delay
13
13
18
ns
OE to CAS hold time
5
5
5
ns
CAS hold time to OE
5
5
5
ns
OE precharge time
5
5
5
ns
W pulse width (Hyper Page Cycle)
5
5
5
ns
RAS pulse width (C-B-R self refresh)
100
100
100
us
13,14,15
RAS precharge time (C-B-R self refresh)
90
110
130
ns
13,14,15
CAS hold time (C-B-R self refresh)
-50
-50
-50
ns
13,14,15
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