參數(shù)資料
型號: KM48C8100B
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 8M x 8bit CMOS Dynamic RAM with Fast Page Mode(8M x 8位CMOS 動態(tài)RAM(帶快速頁模式))
中文描述: 8米× 8位的快速頁面模式的CMOS動態(tài)RAM(8米× 8位的CMOS動態(tài)隨機存儲器(帶快速頁模式))
文件頁數(shù): 7/20頁
文件大?。?/td> 320K
代理商: KM48C8100B
KM48C8000B,
KM48C8100B
CMOS DRAM
TEST MODE CYCLE
Parameter
Symbol
-45
-5
-6
Units
Note
Min
Max
Min
Max
Min
Max
Random read or write cycle time
t
RC
85
95
115
ns
Read-modify-write cycle time
t
RWC
120
138
160
ns
Access time from RAS
t
RAC
50
55
65
ns
3,4,10,12
Access time from CAS
t
CAC
17
18
20
ns
3,4,5,12
Access time from column address
t
AA
28
30
35
ns
3,10,12
RAS pulse width
t
RAS
50
10K
55
10K
65
10K
ns
CAS pulse width
t
CAS
17
10K
18
10K
20
10K
ns
RAS hold time
t
RSH
17
18
20
ns
CAS hold time
t
CSH
50
55
65
ns
Column Address to RAS lead time
t
RAL
28
30
35
ns
CAS to W delay time
t
CWD
37
41
43
ns
7
RAS to W delay time
t
RWD
72
78
88
ns
7
Column Address to W delay time
t
AWD
48
53
58
ns
7
Fast Page mode cycle time
t
PC
36
40
45
ns
Fast Page mode read-modify-write cycle time
t
PRWC
75
81
90
ns
RAS pulse width (Fast Page cycle)
t
RASP
50
200K
55
200K
65
200K
ns
Access time from CAS precharge
t
CPA
31
35
40
ns
3
OE access time
t
OEA
17
18
20
ns
OE to data delay
t
OED
17
18
18
ns
OE command hold time
t
OEH
17
18
20
ns
( Note 11 )
相關PDF資料
PDF描述
KM48C8000B 8M x 8bit CMOS Dynamic RAM with Fast Page Mode(8M x 8位CMOS 動態(tài)RAM(帶快速頁模式))
KM48C8104B 8M x 8bit CMOS Dynamic RAM with Extended Data Out(8M x 8位CMOS 動態(tài)RAM(帶擴展數(shù)據(jù)輸出))
KM48S16030A 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
KM48S16030B 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
KM48S16030 4M x 8Bit x 4 Banks Synchronous DRAM
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