- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374356 > KM48C8000B (SAMSUNG SEMICONDUCTOR CO. LTD.) 8M x 8bit CMOS Dynamic RAM with Fast Page Mode(8M x 8位CMOS 動態(tài)RAM(帶快速頁模式)) PDF資料下載
參數(shù)資料
| 型號： | KM48C8000B |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 8M x 8bit CMOS Dynamic RAM with Fast Page Mode(8M x 8位CMOS 動態(tài)RAM(帶快速頁模式)) |
| 中文描述： | 8米× 8位的快速頁面模式的CMOS動態(tài)RAM（8米× 8位的CMOS動態(tài)隨機存儲器（帶快速頁模式）） |
| 文件頁數(shù)： | 3/20頁 |
| 文件大?。?/td> | 320K |
| 代理商： | KM48C8000B |
KM48C8000B,
KM48C8100B
CMOS DRAM
ABSOLUTE MAXIMUM RATINGS
* Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to
the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
Parameter
Symbol
Rating
Units
Voltage on any pin relative to V
SS
V
IN,
V
OUT
-1.0 to +7.0
V
Voltage on V
CC
supply relative to V
SS
V
CC
-1.0 to +7.0
V
Storage Temperature
Tstg
-55 to +150
°
C
Power Dissipation
P
D
1
W
Short Circuit Output Current
I
OS
Address
50
mA
RECOMMENDED OPERATING CONDITIONS
(Voltage referenced to Vss, T
A
= 0 to 70
°
C)
*1 : V
CC
+2.0V at pulse width
≤
20ns which is measured at V
CC
*2 : -2.0 at pulse width
≤
20ns which is measured at V
SS
Parameter
Symbol
Min
Typ
Max
Units
Supply Voltage
V
CC
4.5
5.0
5.5
V
Ground
V
SS
0
0
0
V
Input High Voltage
V
IH
2.4
-
V
CC
+1.0
*1
0.8
V
Input Low Voltage
V
IL
-1.0
*2
-
V
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions unless otherwise noted.)
Parameter
Symbol
Min
Max
Units
Input Leakage Current (Any input 0
≤
V
IN
≤
V
CC
+0.5V,
all other pins not under test=0 Volt)
I
I(L)
-5
5
uA
Output Leakage Current
(Data out is disabled, 0V
≤
V
OUT
≤
V
CC
)
I
O(L)
-5
5
uA
Output High Voltage Level(I
OH
=-5mA)
V
OH
2.4
-
V
Output Low Voltage Level(I
OL
=4.2mA)
V
OL
-
0.4
V
相關PDF資料 |
PDF描述 |
|---|---|
| KM48C8104B | 8M x 8bit CMOS Dynamic RAM with Extended Data Out(8M x 8位CMOS 動態(tài)RAM(帶擴展數(shù)據(jù)輸出)) |
| KM48S16030A | 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL |
| KM48S16030B | 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL |
| KM48S16030 | 4M x 8Bit x 4 Banks Synchronous DRAM |
| KM48S32230A | 8M x 8Bit x 4 Banks Synchronous DRAM(8M x 8位 x 4組同步動態(tài)RAM) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| KM48C8004B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8bit CMOS Dynamic RAM with Extended Data Out |
| KM48C8100AS-60 | 制造商:Samsung Semiconductor 功能描述: |
| KM48C8104B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8bit CMOS Dynamic RAM with Extended Data Out |
| KM-48F 50UA DC | 制造商:Fujita Electric 功能描述: |
| KM-48F 0-50MV DC | 制造商:Fujita Electric 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復。