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參數(shù)資料
| 型號： | KM48C512D |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | High Speed 512K x 8Bit CMOS Dynamic RAM with with Fast Page Mode(高速512K x 8位 CMOS 動態(tài)RAM(帶快速頁模式)) |
| 中文描述： | 高速的CMOS為512k × 8位動態(tài)隨機存儲器與快速頁面模式（高速為512k × 8位的CMOS動態(tài)隨機存儲器（帶快速頁模式）） |
| 文件頁數(shù)： | 3/20頁 |
| 文件大小： | 346K |
| 代理商： | KM48C512D |
KM48C512D
CMOS DRAM
High Speed
ABSOLUTE MAXIMUM RATINGS
* Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted
to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
Parameter
Symbol
Rating
Units
Voltage on any pin relative to V
SS
V
IN,
V
OUT
-1.0 to +7.0
V
Voltage on V
CC
supply relative to V
SS
V
CC
-1.0 to +7.0
V
Storage Temperature
Tstg
-55 to +150
°
C
Power Dissipation
P
D
1
W
Short Circuit Output Current
I
OS
Address
50
mA
RECOMMENDED OPERATING CONDITIONS
(Voltage referenced to Vss, T
A
= 0 to 70
°
C)
*1 : V
CC
+2.0/20ns(5V), Pulse width is measured at V
CC
*2 : -2.0V/20ns(5V), Pulse width is measured at V
SS
Parameter
Symbol
Min
Typ
Max
Units
Supply Voltage
V
CC
4.5
5.0
5.5
V
Ground
V
SS
0
0
0
V
Input High Voltage
V
IH
2.4
-
V
CC
+1.0
*1
0.8
V
Input Low Voltage
V
IL
-1.0
*2
-
V
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions unless otherwise noted.)
Parameter
Symbol
Min
Max
Units
Input Leakage Current (Any input 0
≤
V
IN
≤
V
IN
+0.5V,
all other input pins not under test=0 Volt)
I
I(L)
-5
5
uA
Output Leakage Current
(Data out is disabled, 0V
≤
V
OUT
≤
V
CC
)
I
O(L)
-5
5
uA
Output High Voltage Level(I
OH
=-5mA)
V
OH
2.4
-
V
Output Low Voltage Level(I
OL
=4.2mA)
V
OL
-
0.4
V
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