- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373157 > KM44S64230A (SAMSUNG SEMICONDUCTOR CO. LTD.) 16M x 4Bit x 4 Banks Synchronous DRAM(16M x 4位 x 4組同步動態(tài)RAM) PDF資料下載
參數(shù)資料
| 型號： | KM44S64230A |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 16M x 4Bit x 4 Banks Synchronous DRAM(16M x 4位 x 4組同步動態(tài)RAM) |
| 中文描述： | 16米x 4位× 4銀行同步DRAM（16米x 4位× 4組同步動態(tài)RAM）的 |
| 文件頁數(shù)： | 5/8頁 |
| 文件大小： | 62K |
| 代理商： | KM44S64230A |
KM44S64230A
CMOS SDRAM
REV. 0 May '98
Preliminary
AC OPERATING TEST CONDITIONS
(V
DD
= 3.3V
±
0.3V, T
A
= 0 to 70
°
C)
Parameter
Value
Unit
AC input levels (Vih/Vil)
2.4/0.4
V
Input timing measurement reference level
1.4
V
Input rise and fall time
tr/tf = 1/1
ns
Output timing measurement reference level
1.4
V
Output load condition
See Fig. 2
3.3V
1200
870
Output
50pF
V
OH
(DC) = 2.4V, I
OH
= -2mA
V
OL
(DC) = 0.4V, I
OL
= 2mA
Vtt = 1.4V
50
Output
50pF
Z0 = 50
(Fig. 2) AC output load circuit
(Fig. 1) DC output load circuit
OPERATING AC PARAMETER
(AC operating conditions unless otherwise noted)
Parameter
Symbol
Version
Unit
Note
-8
-H
-L
-10
Row active to row active delay
t
RRD
(min)
16
20
20
20
ns
1
RAS to CAS delay
t
RCD
(min)
20
20
20
24
ns
1
Row precharge time
t
RP
(min)
20
20
20
24
ns
1
Row active time
t
RAS
(min)
48
50
50
50
ns
1
t
RAS
(max)
100
us
Row cycle time
t
RC
(min)
68
70
70
80
ns
1
Last data in to row precharge
t
RDL
(min)
8
10
10
12
ns
2
Last data in to new col. address delay
t
CDL
(min)
1
CLK
2
Last data in to burst stop
t
BDL
(min)
1
CLK
2
Col. address to col. address delay
t
CCD
(min)
1
CLK
3
Number of valid output data
CAS latency=3
2
ea
4
CAS latency=2
1
1. The minimum number of clock cycles is determined by dividing the minimum time required with clock cycle time
and then rounding off to the next higher integer.
2. Minimum delay is required to complete write.
3. All parts allow every cycle column address change.
4. In case of row precharge interrupt, auto precharge and read burst stop.
Notes :
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM44V1000D | 1M x 4Bit CMOS Dynamic RAM with Fast Page Mode(1M x 4位CMOS 動態(tài)RAM(帶快速頁模式)) |
| KM44V16000B | 16M x 4Bit CMOS Dynamic RAM with Fast Page Mode(16M x 4位CMOS 動態(tài)RAM(帶快速頁模式)) |
| KM44V16100B | 16M x 4Bit CMOS Dynamic RAM with Fast Page Mode(16M x 4位CMOS 動態(tài)RAM(帶快速頁模式)) |
| KM44V16100C | 16M x 4Bit CMOS Dynamic RAM with Fast Page Mode(16M x 4位CMOS 動態(tài)RAM(帶快速頁模式)) |
| KM44V16000C | 16M x 4Bit CMOS Dynamic RAM with Fast Page Mode(16M x 4位CMOS 動態(tài)RAM(帶快速頁模式)) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM44V1000D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
| KM44V4000AS-6 | 制造商:Samsung Electro-Mechanics 功能描述:Dynamic RAM, Fast Page, 4M x 4, 26 Pin, Plastic, TSOP |
| KM44V4000C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
| KM44V4100AT-7 | 制造商:Samsung Semiconductor 功能描述: |
| KM44V4100C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。