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參數(shù)資料
| 型號： | KM44S16020B |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 8M x 4Bit x 2 Banks Synchronous DRAM(8M x 4位 x 2組同步動態(tài)RAM) |
| 中文描述： | 8米× 4位× 2銀行同步DRAM（8米× 4位× 2組同步動態(tài)RAM）的 |
| 文件頁數(shù)： | 2/43頁 |
| 文件大?。?/td> | 597K |
| 代理商： | KM44S16020B |
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KM44S16020B
CMOS SDRAM
REV. 6 June '98
The KM44S16020B is 67,108,864 bits synchronous high data
rate Dynamic RAM organized as 2 x 8,388,608 words by 4 bits,
fabricated with SAMSUNG
′
s high performance CMOS technol-
ogy. Synchronous design allows precise cycle control with the
use of system clock I/O transactions are possible on every clock
cycle. Range of operating frequencies, programmable burst
length and programmable latencies allow the same device to be
useful for a variety of high bandwidth, high performance mem-
ory system applications.
JEDEC standard 3.3V power supply
LVTTL compatible with multiplexed address
Dual banks operation
MRS cycle with address key programs
-. CAS latency (2 & 3)
-. Burst length (1, 2, 4, 8 & Full page)
-. Burst type (Sequential & Interleave)
All inputs are sampled at the positive going edge of the system
clock
Burst read single-bit write operation
DQM for masking
Auto & self refresh
64ms refresh period (4K Cycle)
GENERAL DESCRIPTION
FEATURES
FUNCTIONAL BLOCK DIAGRAM
8M x 4Bit x 2 Banks Synchronous DRAM
ORDERING INFORMATION
Part No.
Max Freq.
125MHz
100MHz
100MHz
100MHz
Interface Package
KM44S16020BT-G/F8
KM44S16020BT-G/FH
KM44S16020BT-G/FL
KM44S16020BT-G/F10
LVTTL
54
TSOP(II)
Samsung Electronics reserves the right to
change products or specification without
notice.
*
Bank Select
Data Input Register
8M x 4
8M x 4
S
O
I
Column Decoder
Latency & Burst Length
Programming Register
A
R
R
R
C
L
L
LCKE
LRAS
LCBR
LWE
LDQM
CLK
CKE
CS
RAS
CAS
WE
DQM
LWE
LDQM
DQi
CLK
ADD
LCAS
LWCBR
Timing Register
相關(guān)PDF資料 |
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| KM44S4020CT | 2M x 4Bit x 2 Banks Synchronous DRAM(2M x 4位 x 2組同步動態(tài)RAM) |
| KM44S64230A | 16M x 4Bit x 4 Banks Synchronous DRAM(16M x 4位 x 4組同步動態(tài)RAM) |
| KM44V1000D | 1M x 4Bit CMOS Dynamic RAM with Fast Page Mode(1M x 4位CMOS 動態(tài)RAM(帶快速頁模式)) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM44S16020CT-G10 | 制造商:SEC 功能描述: |
| KM44S32030 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 4Bit x 4 Banks Synchronous DRAM |
| KM44S32030B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL |
| KM44S32030BT-G/F10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL |
| KM44S32030BT-G/F8 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL |
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