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參數(shù)資料
| 型號： | KM44C16104B |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 16M x 4Bit CMOS Dynamic RAM with Extended Data Out(16M x 4位 CMOS 動態(tài)RAM(帶擴展數(shù)據(jù)輸出)) |
| 中文描述： | 16米x 4位的擴展數(shù)據(jù)輸出的CMOS動態(tài)RAM（1,600 × 4位的CMOS動態(tài)隨機存儲器（帶擴展數(shù)據(jù)輸出）） |
| 文件頁數(shù)： | 6/21頁 |
| 文件大小： | 366K |
| 代理商： | KM44C16104B |
KM44C16004B,
KM44C16104B
CMOS DRAM
AC CHARACTERISTICS
(Continued)
Parameter
Symbol
-45
-5
-6
Units
Note
Min
Max
Min
Max
Min
Max
Data hold time
t
DH
7
8
10
ns
9
Refresh period (4K, Normal)
t
REF
t
REF
64
64
64
ms
Refresh period (8K, Normal)
64
64
64
ms
Write command set-up time
t
WCS
t
CWD
0
0
0
ns
7
CAS to W delay time
24
30
32
ns
7
RAS to W delay time
t
RWD
t
AWD
57
67
77
ns
7
Column address to W delay time
35
42
47
ns
7
CAS set-up time (CAS -before-RAS refresh)
t
CSR
t
CHR
5
5
5
ns
CAS hold time (CAS -before-RAS refresh)
10
10
10
ns
RAS to CAS precharge time
t
RPC
t
CPA
5
5
5
ns
Access time from CAS precharge
24
28
35
ns
3
Hyper Page cycle time
t
HPC
t
HPRWC
17
20
25
ns
13
Hyper Page read-modify-write cycle time
47
47
56
ns
13
CAS precharge time (Hyper page cycle)
t
CP
t
RASP
6.5
8
10
ns
RAS pulse width (Hyper page cycle)
45
200K
50
200K
60
200K
ns
RAS hold time from CAS precharge
t
RHCP
t
OEA
24
30
35
ns
OE access time
12
13
15
ns
OE to data delay
t
OED
t
CPWD
8
13
13
ns
CAS precharge to W delay time
36
45
54
ns
Output buffer turn off delay time from OE
t
OEZ
t
OEH
3
11
3
13
3
13
ns
6
OE command hold time
5
13
15
ns
Write command set-up time (Test mode in)
t
WTS
t
WTH
10
10
10
ns
11
Write command hold time (Test mode in)
10
10
10
ns
11
W to RAS precharge time (C-B-R refresh)
t
WRP
t
WRH
10
10
10
ns
W to RAS hold time (C-B-R refresh)
10
10
10
ns
Output data hold time
t
DOH
t
REZ
4
5
5
ns
Output buffer turn off delay from RAS
3
13
3
13
3
13
ns
6,14
Output buffer turn off delay from W
t
WEZ
t
WED
3
13
3
13
3
13
ns
6
W to data delay
8
15
15
ns
OE to CAS hold time
t
OCH
t
CHO
5
5
5
ns
CAS hold time to OE
5
5
5
ns
OE precharge time
t
OEP
t
WPE
5
5
5
ns
W pulse width (Hyper page Cycle)
5
5
5
ns
RAS pulse width (C-B-R self refresh)
t
RASS
t
RPS
t
CHS
100
100
100
us
15,16,17
RAS precharge time (C-B-R self refresh)
74
90
110
ns
15,16,17
CAS hold time (C-B-R self refresh)
-50
-50
-50
ns
15,16,17
相關PDF資料 |
PDF描述 |
|---|---|
| KM44C16004B | 16M x 4Bit CMOS Dynamic RAM with Extended Data Out(16M x 4位 CMOS 動態(tài)RAM(帶擴展數(shù)據(jù)輸出)) |
| KM44C256A | 256 x 4 Bit CMOS Dynamic RAM with Fast Page Mode |
| KM44C256A-10 | 256 x 4 Bit CMOS Dynamic RAM with Fast Page Mode |
| KM44C256A-12 | CMF60, 12.7 kOhm, +/- 1 Percent, 100 ppm RoHS Compliant: Yes |
| KM44C256A-8 | 256 x 4 Bit CMOS Dynamic RAM with Fast Page Mode |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| KM44C256A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256 x 4 Bit CMOS Dynamic RAM with Fast Page Mode |
| KM44C256A-10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256 x 4 Bit CMOS Dynamic RAM with Fast Page Mode |
| KM44C256A-12 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256 x 4 Bit CMOS Dynamic RAM with Fast Page Mode |
| KM44C256A-8 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256 x 4 Bit CMOS Dynamic RAM with Fast Page Mode |
| KM44C256AP-8 | 制造商:Samsung Semiconductor 功能描述:Dynamic RAM, Fast Page, 256K x 4, 20 Pin, Plastic, DIP |
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