參數(shù)資料
型號: KM44C16104B
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 16M x 4Bit CMOS Dynamic RAM with Extended Data Out(16M x 4位 CMOS 動態(tài)RAM(帶擴(kuò)展數(shù)據(jù)輸出))
中文描述: 16米x 4位的擴(kuò)展數(shù)據(jù)輸出的CMOS動態(tài)RAM(1,600 × 4位的CMOS動態(tài)隨機(jī)存儲器(帶擴(kuò)展數(shù)據(jù)輸出))
文件頁數(shù): 4/21頁
文件大?。?/td> 366K
代理商: KM44C16104B
KM44C16004B,
KM44C16104B
CMOS DRAM
*Note :
I
CC1
, I
CC3
, I
CC4
and I
CC6
are dependent on output loading and cycle rates. Specified values are obtained with the output open.
I
CC
is specified as an average current. In I
CC1
, I
CC3
and I
CC6,
address can be changed maximum once while RAS=V
IL
. In I
CC4
,
address can be changed maximum once within one EDO mode cycle time,
t
HPC
.
DC AND OPERATING CHARACTERISTICS
(Continued)
I
CC1
* : Operating Current (RAS and CAS, Address cycling @
t
RC
=min.)
I
CC2
: Standby Current (RAS=CAS=W=V
IH
)
I
CC3
* : RAS-only Refresh Current (CAS=V
IH
, RAS, Address cycling @
t
RC
=min.)
I
CC4
* : Extended Data Out Mode Current (RAS=V
IL
, CAS, Address cycling @
t
HPC
=min.)
I
CC5
: Standby Current (RAS=CAS=W=V
CC
-0.2V)
I
CC6
* : CAS-Before-RAS Refresh Current (RAS and CAS cycling @
t
RC
=min)
Symbol
Power
Speed
Max
Units
KM44C16004B
KM44C16104B
I
CC1
Don
t care
-45
-5
-6
100
90
80
130
120
110
mA
mA
mA
I
CC2
Normal
Don
t care
2
2
mA
I
CC3
Don
t care
-45
-5
-6
100
90
80
130
120
110
mA
mA
mA
I
CC4
Don
t care
-45
-5
-6
110
100
90
120
110
100
mA
mA
mA
I
CC5
Normal
Don
t care
1
1
mA
I
CC6
Don
t care
-45
-5
-6
100
90
80
130
120
110
mA
mA
mA
相關(guān)PDF資料
PDF描述
KM44C16004B 16M x 4Bit CMOS Dynamic RAM with Extended Data Out(16M x 4位 CMOS 動態(tài)RAM(帶擴(kuò)展數(shù)據(jù)輸出))
KM44C256A 256 x 4 Bit CMOS Dynamic RAM with Fast Page Mode
KM44C256A-10 256 x 4 Bit CMOS Dynamic RAM with Fast Page Mode
KM44C256A-12 CMF60, 12.7 kOhm, +/- 1 Percent, 100 ppm RoHS Compliant: Yes
KM44C256A-8 256 x 4 Bit CMOS Dynamic RAM with Fast Page Mode
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