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參數(shù)資料
| 型號(hào)： | KM44C1000D |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
| 中文描述： | 100萬(wàn)的CMOS x 4位動(dòng)態(tài)隨機(jī)存儲(chǔ)器和快速頁(yè)面模式 |
| 文件頁(yè)數(shù)： | 5/21頁(yè) |
| 文件大小： | 372K |
| 代理商： | KM44C1000D |
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KM44C1000D, KM44V1000D
CMOS DRAM
CAPACITANCE
(T
A
=25
°
C, V
CC
=5V or 3.3V, f=1MHz)
Parameter
Symbol
Min
Max
Units
Input capacitance [A0 ~ A9]
C
IN1
-
5
pF
Input capacitance [RAS, CAS, W, OE]
C
IN2
-
7
pF
Output capacitance [DQ0 - DQ3]
C
DQ
-
7
pF
Test condition (5V device) : V
CC
=5.0V
±
10%, Vih/Vil=2.4/0.8V, Voh/Vol=2.4/0.4V
Test condition (3.3V device) : V
CC
=3.3V
±
0.3V, Vih/Vil=2.2/0.7V, Voh/Vol=2.0/0.8V
Note) *1 : 5V only
Parameter
Symbol
-5
*1
-6
7
Units
Notes
Min
Max
Min
Max
Min
Max
Random read or write cycle time
t
RC
t
RWC
t
RAC
t
CAC
t
AA
t
CLZ
t
OFF
t
T
t
RP
t
RAS
t
RSH
t
CSH
90
110
130
ns
Read-modify-write cycle time
132
152
177
ns
Access time from RAS
50
60
70
ns
3,4,10
Access time from CAS
15
15
20
ns
3,4,5
Access time from column address
25
30
35
ns
3,10
CAS to output in Low-Z
0
0
0
ns
3
Output buffer turn-off delay
0
12
0
12
0
17
ns
6
Transition time (rise and fall)
3
50
3
50
3
50
ns
2
RAS precharge time
30
40
50
ns
RAS pulse width
50
10K
60
10K
70
10K
ns
RAS hold time
15
15
20
ns
CAS hold time
50
60
70
ns
CAS pulse width
t
CAS
t
RCD
t
RAD
t
CRP
t
ASR
t
RAH
t
ASC
t
CAH
t
RAL
t
RCS
t
RCH
t
RRH
15
10K
15
10K
20
10K
ns
RAS to CAS delay time
20
35
20
45
20
50
ns
4
RAS to column address delay time
15
25
15
30
15
35
ns
10
CAS to RAS precharge time
5
5
5
ns
Row address set-up time
0
0
0
ns
Row address hold time
10
10
10
ns
Column address set-up time
0
0
0
ns
Column address hold time
10
10
15
ns
Column address to RAS lead time
25
30
35
ns
Read command set-up time
0
0
0
ns
Read command hold time referenced to CAS
0
0
0
ns
8
Read command hold time referenced to RAS
0
0
0
ns
Write command hold time
t
WCH
t
WP
t
RWL
t
CWL
10
10
15
ns
Write command pulse width
10
10
15
ns
Write command to RAS lead time
15
15
15
ns
Write command to CAS lead time
13
15
15
ns
AC CHARACTERISTICS
(0
°
C
≤
T
≤
70
°
C, See note 1,2)
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|---|---|
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM44C1000DJ6 | 制造商:SAMSUNG 功能描述:* |
| KM44C16000B | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:16M x 4bit CMOS Dynamic RAM with Fast Page Mode |
| KM44C16100B | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:16M x 4bit CMOS Dynamic RAM with Fast Page Mode |
| KM44C256A | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:256 x 4 Bit CMOS Dynamic RAM with Fast Page Mode |
| KM44C256A-10 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:256 x 4 Bit CMOS Dynamic RAM with Fast Page Mode |
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