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參數資料
| 型號： | KM44C1000D |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
| 中文描述： | 100萬的CMOS x 4位動態(tài)隨機存儲器和快速頁面模式 |
| 文件頁數： | 1/21頁 |
| 文件大小： | 372K |
| 代理商： | KM44C1000D |
KM44C1000D, KM44V1000D
CMOS DRAM
This is a family of 1,048,576 x 4bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells
within the same row. Power supply voltage (+5V or +3.3V), access time (-5, -6 or -7), power consumption(Normal or Low power), and
package type (SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and
Hidden refresh capabilities. Furthermore, self-refresh operation is available in 3.3V Low power version.
This 1Mx4 Fast Page Mode DRAM family is fabricated using Samsung
′
s advanced CMOS process to realize high band-width, low power
consumption and high reliability. It may be used as main memory for main frames and mini computers, personal computer and high per-
formance microprocessor systems.
Part Identification
- KM44C1000D/D-L(5V, 1K Ref.)
- KM44V1000D/D-L(3.3V, 1K Ref.)
Fast Page Mode operation
CAS-before-RAS refresh capability
RAS-only and Hidden refresh capability
Self-refresh capability (3.3V, L-ver only)
Fast parallel test mode capability
TTL(5V)/LVTTL(3.3V) compatible inputs and outputs
Early write or output enable controlled write
JEDEC Standard pinout
Available in 26(20)-pin SOJ 300mil and TSOP(II)
300mil packages
Single +5V
±
10% power supply(5V product)
Single +3.3V
±
0.3V power supply(3.3V product)
Control
Clocks
VBB Generator
Refresh Timer
Refresh Control
Refresh Counter
Row Address Buffer
Col. Address Buffer
Row Decoder
Column Decoder
RAS
CAS
W
Vcc
Vss
DQ0
to
DQ3
Memory Array
1,048,576 x4
Cells
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to
change products and specifications without notice.
1M x 4Bit CMOS Dynamic RAM with Fast Page Mode
DESCRIPTION
FEATURES
FUNCTIONAL BLOCK DIAGRAM
Refresh Cycles
Part
NO.
Refresh
cycle
Refresh Period
Normal
L-ver
KM44C1000D
KM44V1000D
1K
16ms
128ms
Performance Range
Speed
t
RAC
-5
50ns
-6
60ns
-7
70ns
t
CAC
15ns
15ns
20ns
t
RC
90ns
110n
130n
t
PC
35ns
40ns
45ns
Remark
5V only
5V/3.3V
5V/3.3V
Active Power Dissipation
Speed
-5
-6
-7
3.3V
-
220
200
5V
470
415
360
Unit : mW
S
Data out
Buffer
Data in
Buffer
OE
A0~A9
相關PDF資料 |
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|---|---|
| KM44C16000B | 16M x 4bit CMOS Dynamic RAM with Fast Page Mode |
| KM44C4000C | 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
| KM44C4100C | 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode(4M x 4位 CMOS 動態(tài)RAM(帶快速頁模式)) |
| KM44V4000C | 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode(4M x 4位 CMOS 動態(tài)RAM(帶快速頁模式)) |
| KM44V4100C | 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode(4M x 4位 CMOS 動態(tài)RAM(帶快速頁模式)) |
相關代理商/技術參數 |
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| KM44C16000B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 4bit CMOS Dynamic RAM with Fast Page Mode |
| KM44C16100B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 4bit CMOS Dynamic RAM with Fast Page Mode |
| KM44C256A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256 x 4 Bit CMOS Dynamic RAM with Fast Page Mode |
| KM44C256A-10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256 x 4 Bit CMOS Dynamic RAM with Fast Page Mode |
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