參數(shù)資料
型號: KM416RD16D
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 15VPP 86DB 2 TERM CERAM BUZZER
中文描述: 128/144Mbit RDRAM的256 × 16/18位× 2 * 16屬銀行直接RDRAMTM
文件頁數(shù): 2/64頁
文件大小: 4052K
代理商: KM416RD16D
Page -1
KM416RD8AC(D)/KM418RD8AC(D)
Direct RDRAM
Rev. 1.01 Oct. 1999
Revision History
Version 1.0 (July 1999) -
Preliminary
- Based on the Rambus Datasheet 1.0 ver.
Version 1.01 (October 1999)
On page 1
- Delete the part numbers of low power.
On page 32
- Add the data of CNFGA Register @ Figure 28.
On page 33
- Add the data of CNFGB Register @ Figure 29 and correct the CORG4..0 field of CNFGB register.
On page 44
- Add the Tj value from TBD to Max. 100
°
C @ Table 18.
On page 46
- Add the
Θ
JC
value from TBD to 0.2
°
C/Watt @ Table 20.
On page 55
- Add the current values for 356MHz and 300MHz RDRAM device.
相關PDF資料
PDF描述
KM416RD2AC 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
KM416RD2AD 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
KM416RD2C 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
KM416RD2D 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
KM416RD32AC 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
相關代理商/技術參數(shù)
參數(shù)描述
KM416RD2AC 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
KM416RD2AD 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
KM416RD2C 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
KM416RD2D 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
KM416RD32AC 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM