參數(shù)資料
型號(hào)： KM416RD16C
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 15VPP 74DB 2 TERM CERAM BUZZER
中文描述： 128/144Mbit RDRAM的256 × 16/18位× 2 * 16屬銀行直接RDRAMTM
文件頁(yè)數(shù)： 21/64頁(yè)
文件大?。?/td> 4052K
代理商： KM416RD16C
Page 18
KM416RD8AC(D)/KM418RD8AC(D)
Direct RDRAM
Rev. 1.01 Oct. 1999
Precharge Mechanisms
Figure 13 shows an example of precharge with the ROWR
packet mechanism. The PRER command must occur a time
t
RAS
after the ACT command, and a time t
RP
before the next
ACT command. This timing will serve as a baseline against
which the other precharge mechanisms can be compared.
Figure 14 (top) shows an example of precharge with a RDA
command. A bank is activated with an ROWA packet on the
ROW pins. Then, a series of four dualocts are read with RD
commands in COLC packets on the COL pins. The fourth of
these commands is a RDA, which causes the bank to auto-
matically precharge when the final read has finished. The
timing of this automatic precharge is equivalent to a PRER
command in an ROWR packet on the ROW pins that is
offset a time t
OFFP
from the COLC packet with the RDA
command. The RDA command should be treated as a RD
command in a COLC packet as well as a simultaneous (but
offset) PRER command in an ROWR packet when analyzing
interactions with other packets.
Figure 14 (middle) shows an example of precharge with a
WRA command. As in the RDA example, a bank is acti-
vated with an ROWA packet on the ROW pins. Then, two
dualocts are written with WR commands in COLC packets
on the COL pins. The second of these commands is a WRA,
which causes the bank to automatically precharge when the
final write has been retired. The timing of this automatic
precharge is equivalent to a PRER command in an ROWR
packet on the ROW pins that is offset a time t
OFFP
from the
COLC packet that causes the automatic retire. The WRA
command should be treated as a WR command in a COLC
packet as well as a simultaneous (but offset) PRER
command in an ROWR packet when analyzing interactions
with other packets. Note that the automatic retire is triggered
by a COLC packet a time t
RTR
after the COLC packet with
the WR command unless the second COLC contains a RD
command to the same device. This is described in more
detail in Figure 17.
Figure 14 (bottom) shows an example of precharge with a
PREX command in an COLX packet. A bank is activated
with an ROWA packet on the ROW pins. Then, a series of
four dualocts are read with RD commands in COLC packets
on the COL pins. The fourth of these COLC packets
includes an COLX packet with a PREX command. This
causes the bank to precharge with timing equivalent to a
PRER command in an ROWR packet on the ROW pins that
is offset a time t
OFFP
from the COLX packet with the PREX
command.
Figure 13: Precharge via PRER Command in ROWR Packet
CTM/CFM
DQA8..0
DQB8..0
COL4
..COL0
ROW2
..ROW0
T
0
T
4
T
8
T
12
T
1
T
5
T
9
T
13
T
2
T
6
T
10
T
14
T
3
T
7
T
11
T
15
T
16
T
20
T
24
T
28
T
17
T
21
T
25
T
29
T
18
T
22
T
26
T
30
T
19
T
23
T
27
T
31
T
32
T
36
T
40
T
44
T
33
T
37
T
41
T
45
T
34
T
38
T
42
T
46
T
35
T
39
T
43
T
47
ACT a0
PRER a5
t
RAS
t
RC
a0 = {Da,Ba,Ra}
a5 = {Da,Ba}
b0 = {Da,Ba,Rb}
t
RP
ACT b0
相關(guān)PDF資料
PDF描述
KM416RD16D 15VPP 86DB 2 TERM CERAM BUZZER
KM416RD2AC 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
KM416RD2AD 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
KM416RD2C 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
KM416RD2D 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KM416RD16D 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
KM416RD2AC 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
KM416RD2AD 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
KM416RD2C 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
KM416RD2D 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
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