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參數(shù)資料
| 型號(hào)： | KM416L8031BT-G(L)0 |
| 廠(chǎng)商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | DDR SDRAM Specification Version 1.0 |
| 中文描述： | DDR SDRAM的規(guī)范版本1.0 |
| 文件頁(yè)數(shù)： | 2/53頁(yè) |
| 文件大小： | 669K |
| 代理商： | KM416L8031BT-G(L)0 |
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- 2 -
REV. 1.0 November. 2. 2000
128Mb DDR SDRAM
Revision History
Version 0 (May, 1998)
- First version for internal review
Version 0.1(June, 1998)
- Added x4 organization
Version 0.2(Sep,1998)
1. Added "Issue prcharge command for all banks of the device" as the fourth step of power-up squence.
2. In power down mode timing diagram, NOP condition is added to precharge power down exit.
Version 0.3(Dec,1998)
- Added QFC Function.
-
Added DC current value
- Reduce I/O capacitance values
Version 0.4(Feb,1999)
-Added DDR SDRAM history for reference(refer to the following page)
-Added low power version DC spec
Version 0.5(Apr,1999)
-Revised following first showing for JEDEC standard
-
Added DC target current based on new DC test condition
Version 0.6(July 1,1999)
1.Modified binning policy
From To
-Z (133Mhz) -Z (133Mhz/266Mbps@CL=2)
-8 (125Mhz) -Y (133Mhz/266Mbps@CL=2.5)
-0 (100Mhz) -0 (100Mhz/200Mbps@CL=2)
2.Modified the following AC spec values
*1
: Changed description method for the same functionality. This means no difference from the previous version.
3.Changed the following AC parameter symbol
From. To.
Output data access time from CK/CK tDQCK tAC
Version 0.61(August 9,1999)
- Changed the some values of "write with auto precharge" table for different bank in page 31.
From.
To.
-Z
-0
-Z
-Y
-0
tAC
+/- 0.75ns
+/- 1ns
+/- 0.75ns
+/- 0.75ns
+/- 0.8ns
tDQSCK
+/- 0.75ns
+/- 1ns
+/- 0.75ns
+/- 0.75ns
+/- 0.8ns
tDQSQ
+/- 0.5ns
+/- 0.75ns
+/- 0.5ns
+/- 0.5ns
+/- 0.6ns
tDS/tDH
0.5 ns
0.75 ns
0.5 ns
0.5 ns
0.6 ns
tCDLR
*1
tPRE
*1
tRPST
*1
tHZQ
*1
2.5tCK-tDQSS
2.5tCK-tDQSS
1tCK
1tCK
1tCK
1tCK +/- 0.75ns
1tCK +/- 1ns
0.9/1.1 tCK
0.9/1.1 tCK
0.9/1.1 tCK
tCK/2 +/- 0.75ns
tCK/2 +/- 1ns
0.4/0.6 tCK
0.4/0.6 tCK
0.4/0.6 tCK
tCK/2 +/- 0.75ns
tCK/2 +/- 1ns
+/- 0.75ns
+/- 0.75ns
+/-0.8ns
Asserted
command
For Different Bank
3
4
Old
New
Old
New
Read
Legal
Illegal
Legal
Illegal
Read + AP
*1
Legal
Illegal
Legal
Illegal
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM44L32031BT-G(L)Y | DDR SDRAM Specification Version 1.0 |
| KM48S2020C | 1M x 8Bit x 2 Banks Synchronous DRAM(1M x 8位 x 2組同步動(dòng)態(tài)RAM) |
| KM48S8020B | 4M x 8Bit x 2 Banks Synchronous DRAM(4M x 8位 x 2組同步動(dòng)態(tài)RAM) |
| KM48S8030D | 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL |
| KM48S8030 | 2M x 8Bit x 4 Banks Synchronous DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM416L8031BT-GLZ/Y/0 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:DDR SDRAM Specification Version 1.0 |
| KM416RD16AC | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| KM416RD16AD | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| KM416RD16C | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| KM416RD16D | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
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