參數(shù)資料
型號(hào): KM416C4100C
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 4M x 16bit CMOS Dynamic RAM with Fast Page Mode
中文描述: 4米× 16位的CMOS動(dòng)態(tài)隨機(jī)存儲(chǔ)器的快速頁(yè)面模式
文件頁(yè)數(shù): 7/35頁(yè)
文件大?。?/td> 901K
代理商: KM416C4100C
KM416C4000C,
KM416C4100C
CMOS DRAM
TEST MODE CYCLE
Parameter
Symbol
-5
-6
Units
Note
Min
Max
Min
Max
Random read or write cycle time
t
RC
95
115
ns
Read-modify-write cycle time
t
RWC
138
160
ns
Access time from RAS
t
RAC
55
65
ns
3,4,10,12
Access time from CAS
t
CAC
18
20
ns
3,4,5,12
Access time from column address
t
AA
30
35
ns
3,10,12
RAS pulse width
t
RAS
55
10K
65
10K
ns
CAS pulse width
t
CAS
18
10K
20
10K
ns
RAS hold time
t
RSH
18
20
ns
CAS hold time
t
CSH
55
65
ns
Column Address to RAS lead time
t
RAL
30
35
ns
CAS to W delay time
t
CWD
41
43
ns
7
RAS to W delay time
t
RWD
78
88
ns
7
Column Address to W delay time
t
AWD
53
58
ns
7
Fast Page mode cycle time
t
PC
40
45
ns
Fast Page mode read-modify-write cycle time
t
PRWC
81
90
ns
RAS pulse width (Fast Page cycle)
t
RASP
55
200K
65
200K
ns
Access time from CAS precharge
t
CPA
35
40
ns
3
OE access time
t
OEA
18
20
ns
OE to data delay
t
OED
18
18
ns
OE command hold time
t
OEH
18
20
ns
( Note 11 )
相關(guān)PDF資料
PDF描述
KM416C4004C 4M x 16bit CMOS Dynamic RAM with Extended Data Out
KM416C4104C 4M x 16bit CMOS Dynamic RAM with Extended Data Out
KM416C4100B 4M x 16bit CMOS Dynamic RAM with Fast Page Mode
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KM418RD2AD 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
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