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參數資料
| 型號： | KM416C4100C |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
| 中文描述： | 4米× 16位的CMOS動態(tài)隨機存儲器的快速頁面模式 |
| 文件頁數： | 4/35頁 |
| 文件大小： | 901K |
| 代理商： | KM416C4100C |
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KM416C4000C,
KM416C4100C
CMOS DRAM
*Note :
I
CC1
, I
CC3
, I
CC4
and I
CC6
are dependent on output loading and cycle rates. Specified values are obtained with the output open.
I
CC
is specified as an average current. In I
CC1
, I
CC3
and I
CC6,
address can be changed maximum once while RAS=V
IL
. In I
CC4
,
address can be changed maximum once within one fast page mode cycle time,
t
PC
.
DC AND OPERATING CHARACTERISTICS
(Continued)
I
CC1
* : Operating Current (RAS and UCAS, LCAS, Address cycling @
t
RC
=min.)
I
CC2
: Standby Current (RAS=UCAS=LCAS=W=V
IH
)
I
CC3
* : RAS-only Refresh Current (UCAS=LCAS=V
IH
, RAS, Address cycling @
t
RC
=min.)
I
CC4
* : Fast Page Mode Current (RAS=V
IL
, UCAS or LCAS, Address cycling @
t
PC
=min.)
I
CC5
: Standby Current (RAS=UCAS=LCAS=W=V
CC
-0.2V)
I
CC6
* : CAS-Before-RAS Refresh Current (RAS and UCAS or LCAS cycling @
t
RC
=min)
Symbol
Power
Speed
Max
Units
KM416C4000C
KM416C4100C
I
CC1
Don
′
t care
-5
-6
90
80
120
110
mA
mA
I
CC2
Normal
Don
′
t care
2
2
mA
I
CC3
Don
′
t care
-5
-6
90
80
120
110
mA
mA
I
CC4
Don
′
t care
-5
-6
60
50
70
60
mA
mA
I
CC5
Normal
Don
′
t care
1
1
mA
I
CC6
Don
′
t care
-5
-6
120
110
120
110
mA
mA
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相關代理商/技術參數 |
參數描述 |
|---|---|
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