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參數(shù)資料
| 型號(hào)： | KM416C256D |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | CMF-55 24M 5% T-0 EK E3 |
| 中文描述： | 256 × 16Bit的CMOS動(dòng)態(tài)RAM的快速頁面模式 |
| 文件頁數(shù)： | 8/8頁 |
| 文件大小： | 83K |
| 代理商： | KM416C256D |
KM416C256D, KM416V256D
CMOS DRAM
512cycle of burst refresh must be executed within 8ms before and after self refresh in order to meet refresh specification (L-
version).
tASC, tCAH are referenced to the earlier CAS rising edge.
tCP is specified from the last CAS rising edge in the previous cycle to the first CAS falling edge in the next cycle.
tCWD is referenced to the later CAS falling edge at word red-modify-write cycle.
t
CWL
is specified from W falling edge to the earlier CAS rising edge.
t
CSR
is referenced to earlier CAS falling low before RAS transition low.
t
CHR
is referenced to the later CAS rising high after RAS transition low.
t
CSR
t
CHR
RAS
LCAS
UCAS
t
DS
t
DH
LCAS
DQ0 ~ DQ15
Din
20.
16.
15.
14.
11.
13.
12.
17.
t
DS
, t
DH
are specified for earlier CAS falling low.
UCAS
w
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM416V256D | 256K x 16Bit CMOS Dynamic RAM with Fast Page Mode |
| KM416C4000C | RESISTOR |
| KM416C4100C | 4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
| KM416C4004C | 4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| KM416C4104C | 4M x 16bit CMOS Dynamic RAM with Extended Data Out |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM416C256DT-6 | 制造商:Samsung Semiconductor 功能描述: |
| KM416C4000B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
| KM416C4000C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
| KM416C4004C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| KM416C4100B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
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