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參數(shù)資料
| 型號(hào)： | KM29N32000T |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 4M x 8 Bit NAND Flash Memory(4M x 8位 NAND閃速存儲(chǔ)器) |
| 中文描述： | 4米× 8位NAND閃存（4米× 8位的NAND閃速存儲(chǔ)器） |
| 文件頁(yè)數(shù)： | 9/26頁(yè) |
| 文件大?。?/td> | 316K |
| 代理商： | KM29N32000T |
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KM29N32000T, KM29N32000IT
FLASH MEMORY
9
Identifying Invalid Block(s) in the KM29N32000
All device locations are erased(FFh) prior to shipping. However, every first and second page of invalid blocks are programmed wi th
00h data. These pages may or may not contain the invalid cell(s). The 00h data just marks the block(s) that contains the invalid
cell(s). The system must be able to recognize invalid block(s) via the following suggested flow chart (Figure 1).
INVALID BLOCKS
The KM29N32000 Flash device may or may not contain up to 10 invalid blocks. Invalid blocks are defined as blocks that contain on e
or more invalid bits. Typically, an invalid block will contain a single bad bit. Devices with invalid block(s) have the same qua lity levels
as devices with all valid blocks and have the same AC and DC characteristics. An invalid block(s) does not affect the performanc e of
valid block(s) because it is isolated from the bit line and the common source line by a select transistor. The system design mus t be
able to mask out the invalid block(s) via address mapping. The 1st block of the KM29N32000, however, is fully guaranteed to be a
good block.
KM29N32000 Technical Notes
Figure 1. Flow chart to create invalid block table.
Start
Set : Block = 0
Check "FF"
Set : Block n + 1
Block = 511
End
Create (or update)
invalid block(s) Table
No
No
Yes
Yes
*
For the 1st or 2nd page
*
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM29N32000TS | 4M x 8 Bit NAND Flash Memory(4M x 8位 NAND閃速存儲(chǔ)器) |
| KM29U128IT | 16M x 8 Bit NAND Flash Memory |
| KM29U128T | 16M x 8 Bit NAND Flash Memory |
| KM29U64000IT | 8M x 8 Bit NAND Flash Memory |
| KM29U64000T | 8M x 8 Bit NAND Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM29U128IT | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory |
| KM29U128T | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory |
| KM29U64000IT | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8 Bit NAND Flash Memory |
| KM29U64000T | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8 Bit NAND Flash Memory |
| KM29V16000AIT | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY |
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