參數(shù)資料
型號: KM29N32000T
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 4M x 8 Bit NAND Flash Memory(4M x 8位 NAND閃速存儲器)
中文描述: 4米× 8位NAND閃存(4米× 8位的NAND閃速存儲器)
文件頁數(shù): 14/26頁
文件大小: 316K
代理商: KM29N32000T
KM29N32000T, KM29N32000IT
FLASH MEMORY
14
* Status Read Cycle
CE
WE
CLE
RE
I/O
0
~
7
NOTES :
Transition is measured
±
200mV from steady state voltage with load.
This parameter is sampled and not 100% tested.
70H
Status Output
t
CLS
t
CLH
t
CS
t
WP
t
CH
t
DS
t
DH
t
RSTO
t
IR
t
RHZ*
t
CHZ*
t
WHR
t
CSTO
t
CLS
READ1 OPERATION
(READ ONE PAGE)
CE
CLE
R/B
I/O
0
~
7
WE
ALE
RE
Busy
00h or 01h
A
0
~ A
7
A
9
~ A
16
A
17
~ A
21
Dout N
Dout N+1
Dout N+2
Dout N+3
Dout 527
Column
Address
Page(Row)
Address
t
WB
t
AR2
t
R
t
RC
t
RHZ
t
RR
t
CHZ
t
CEH
t
RB
t
CRY
t
WC
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