參數(shù)資料
型號： KFG1216D2A-FED5
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： FLASH MEMORY
中文描述： 閃存
文件頁數(shù)： 108/114頁
文件大?。?/td> 1382K
代理商： KFG1216D2A-FED5
OneNAND512(KFG1216x2A-xxB5)
FLASH MEMORY
108
Synchronous Mode Using the INT Pin
When operating synchronously, INT is tied directly to a Host GPIO.
An alternate method of determining the end of an operation is to continuously monitor the Interrupt Status Register Bit instead of
using the INT pin.
Host
OneNAND
Asynchronous Mode Using the INT Pin
When configured to operate in an asynchronous mode, /CE and /AVD of the OneNAND are tied to /CE of the Host. CLK is tied to the
Host Vss (Ground). /RDY is tied to a no-connect. /OE of the OneNAND and Host are tied together and INT is tied to a GPIO.
RDY
OE
CLK
CE
RDY
OE
CLK
CE
AVD
AVD
GPIO
INT
Host
OneNAND
N.C
OE
Vss
CE
RDY
OE
CLK
CE
AVD
GPIO
INT
INT
Command
This can be configured in either a synchronous mode or an asynchronous mode.
7.1.2 Polling the Interrupt Register Status Bit
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KFG1216D2A-FED6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
KFG1216D2A-FIB5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
KFG1216D2A-FIB6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
KFG1216D2A-FID5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
KFG1216D2A-FID6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
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