參數(shù)資料
型號(hào)： KBE00G003M-D411
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： NAND 512Mb*2 + Mobile SDRAM 256Mb*2
中文描述： NAND閃存的512Mb * 2移動(dòng)SDRAM 256Mb的* 2
文件頁(yè)數(shù)： 64/89頁(yè)
文件大?。?/td> 1238K
代理商： KBE00G003M-D411
KBE00G003M-D411
MCP MEMORY
July 2005
64
Revision 0.1
tRDL =2CLK
tDAL =tRDL + tRP
*4
*NOTE:
1. To prevent bus contention, DQM should be issued which makes at least one gap between data in and data out.
2. To inhibit invalid write, DQM should be issued.
3. This precharge command and burst write command should be of the same bank, otherwise it is not precharge interrupt but only another bank pre-
charge of four banks operation.
tRDL
*1
1
2
*NOTE:
1. SAMSUNG can support tRDL=2CLK .
2. Number of valid output data after row precharge : 1, 2 for CAS Latency = 2, 3 respectively.
3. The row active command of the precharge bank can be issued after tRP from this point.
The new read/write command of other activated bank can be issued from this point.
At burst read/write with auto precharge, CAS interrupt of the same bank is illegal
4. tDAL defined Last data in to Active delay. SAMSUNG can support tDAL=tRDL+ tRP .
Auto Precharge Starts
*3
*2
*3
*2
5. Write Interrupted by Precharge & DQM
6. Precharge
1) Normal Write
BL=4 & tRDL=2CLK
7. Auto Precharge
1) tRDL = 2CLK
CMD
DQ
CLK
DQM
WR
PRE
D
0
D
1
D
2
Masked by DQM
CMD
DQ
CLK
D
0
D
1
D
2
D
3
WR
PRE
2) Normal Read (BL=4)
CLK
CMD
DQ(CL2)
DQ(CL3)
RD
PRE
Q
0
Q
1
Q
2
Q
3
Q
0
Q
1
Q
2
Q
3
1) Normal Write (BL=4)
CLK
CMD
DQ
WR
Auto Precharge Starts@tRDL=2CLK
*3
D
0
D
1
D
2
D
3
ACT
2) Normal Read (BL=4)
CLK
CMD
DQ(CL2)
DQ(CL3)
RD
Q
0
Q
1
Q
2
Q
3
Q
0
Q
1
Q
2
Q
3
相關(guān)PDF資料
PDF描述
KBE00S009M 1Gb NAND x 2 + 256Mb Mobile SDRAM x 2
KBE00S009M-D411 1Gb NAND x 2 + 256Mb Mobile SDRAM x 2
KBJ2501 25A SINGLE PHASE SILICON BRIDGE RECTIFIER
KBJ2502 25A SINGLE PHASE SILICON BRIDGE RECTIFIER
KBJ2503 25A SINGLE PHASE SILICON BRIDGE RECTIFIER
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KBE00S003M 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb NAND*2 + 256Mb Mobile SDRAM*2
KBE00S003M-D411 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb NAND*2 + 256Mb Mobile SDRAM*2
KBE00S009M 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb NAND x 2 + 256Mb Mobile SDRAM x 2
KBE00S009M-D411 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb NAND x 2 + 256Mb Mobile SDRAM x 2
KB-E100SRW 功能描述:LED 顯示器和配件 Red 640nm 90mcd Diffused Light Bar RoHS:否 制造商:Avago Technologies 顯示器類型:7 Segment 數(shù)位數(shù)量:2 字符大小:7.8 mm x 14.22 mm 照明顏色:Red 波長(zhǎng):628 nm 共用管腳:Common Anode 工作電壓:2.05 V 工作電流:20 mA 最大工作溫度:+ 85 C 最小工作溫度:- 35 C 封裝:Tube
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