參數(shù)資料
型號(hào)： KBE00F005A
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 512Mb NAND*2 + 256Mb Mobile SDRAM*2
中文描述： 的512Mb的NAND * 2 256Mb的移動(dòng)SDRAM * 2
文件頁數(shù)： 65/87頁
文件大?。?/td> 1353K
代理商： KBE00F005A
KBE00F005A-D411
MCP MEMORY
June 2005
65
Revision 1.0
12. About Burst Type Control
Basic
MODE
Sequential Counting
At MRS A
3
= "0". See the BURST SEQUENCE TABLE. (BL=4, 8)
BL=1, 2, 4, 8 and full page.
Interleave Counting
At MRS A
3
= "1". See the BURST SEQUENCE TABLE. (BL=4, 8)
BL=4, 8. At BL=1, 2 Interleave Counting = Sequential Counting.
Random
MODE
Random column Access
t
CCD
= 1 CLK
Every cycle Read/Write Command with random column address can realize Random
Column Access.
That is similar to Extended Data Out (EDO) Operation of conventional DRAM.
13. About Burst Length Control
Basic
MODE
1
At MRS A
2,1,0
= "000".
At auto precharge, t
RAS
should not be violated.
2
At MRS A
2,1,0
= "001".
At auto precharge, t
RAS
should not be violated.
4
At MRS A
2,1,0
= "010".
8
At MRS A
2,1,0
= "011".
Full Page
At MRS A
2,1,0
= "111".
Wrap around mode(infinite burst length) should be stopped by burst stop.
RAS interrupt or CAS interrupt.
Special
MODE
BRSW
At MRS A
9
= "1".
Read burst =1, 2, 4, 8, full page write Burst =1.
At auto precharge of write, t
RAS
should not be violated.
Random
MODE
Burst Stop
t
BDL
= 1, Valid DQ after burst stop is 1, 2 for CAS latency 2, 3 respectively
Using burst stop command, any burst length control is possible.
Interrupt
MODE
RAS Interrupt
(Interrupted by Precharge)
Before the end of burst, Row precharge command of the same bank stops read/write
burst with Row precharge.
t
RDL
= 2 with DQM, valid DQ after burst stop is 1, 2 for CAS latency 2, 3 respectively.
During read/write burst with auto precharge, RAS interrupt can not be issued.
CAS Interrupt
Before the end of burst, new read/write stops read/write burst and starts new
read/write burst.
During read/write burst with auto precharge, CAS interrupt can not be issued.
相關(guān)PDF資料
PDF描述
KBE00F005A-D411 512Mb NAND*2 + 256Mb Mobile SDRAM*2
KBE00S003M 1Gb NAND*2 + 256Mb Mobile SDRAM*2
KBE00S003M-D411 1Gb NAND*2 + 256Mb Mobile SDRAM*2
KBJ408G 4.0A GLASS PASSIVATED BRIDGE RECTIFIER
KBJ4005G 4.0A GLASS PASSIVATED BRIDGE RECTIFIER
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KBE00F005A-D411 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb NAND*2 + 256Mb Mobile SDRAM*2
KBE00G003M 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:NAND 512Mb*2 + Mobile SDRAM 256Mb*2
KBE00G003M-D411 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:NAND 512Mb*2 + Mobile SDRAM 256Mb*2
KBE00S003M 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb NAND*2 + 256Mb Mobile SDRAM*2
KBE00S003M-D411 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb NAND*2 + 256Mb Mobile SDRAM*2
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*